Abstract
Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on electrodes on which the ultrathin film is deposited. The contact resistance of the buried electrodes to the ultrathin ALD TiN films is investigated using contact chain structures. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm in thickness. It is shown that contact chain structures with buried electrodes can be used successfully to characterize the contact resistance to sub 10 nm ALD TiN films
Original language | Undefined |
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Title of host publication | Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors |
Place of Publication | Utrecht, The Netherlands |
Publisher | STW |
Pages | 150-152 |
Number of pages | 3 |
ISBN (Print) | 978-90-73461-62-8 |
Publication status | Published - 26 Nov 2009 |
Event | 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands Duration: 26 Nov 2009 → 27 Nov 2009 Conference number: 12 |
Publication series
Name | |
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Publisher | Technology Foundation STW |
Conference
Conference | 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 |
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Abbreviated title | SAFE |
Country/Territory | Netherlands |
City | Veldhoven |
Period | 26/11/09 → 27/11/09 |
Keywords
- METIS-264270
- Atomic Layer Deposition
- Contact resistance
- SC-ICS: Integrated Chemical Sensors
- Titanium Nitride
- Test structure
- EWI-17062
- IR-69054