Contact resistance measurement structures for high frequencies

Deepu Roy, Ralf M.T. Pijper, Luuk F. Tiemeijer, Robertus A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metalto-PCM interface is derived for different contact impedances.
    Original languageUndefined
    Title of host publicationProceedings of the 24th International Conference on Microelectronic Test Structures (ICMTS)
    Place of PublicationUSA
    PublisherIEEE Electron Devices Society
    Pages49-54
    Number of pages6
    ISBN (Print)978-1-4244-8527-7
    DOIs
    Publication statusPublished - 4 Apr 2011
    Event24th International Conference on Microelectronic Test Structures, ICMTS 2011 - Amsterdam, Netherlands
    Duration: 4 Apr 20117 Apr 2011
    Conference number: 24
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

    Publication series

    Name
    PublisherIEEE Electron Devices Society
    ISSN (Print)1071-9032

    Conference

    Conference24th International Conference on Microelectronic Test Structures, ICMTS 2011
    Abbreviated titleICMTS
    CountryNetherlands
    CityAmsterdam
    Period4/04/117/04/11
    Internet address

    Keywords

    • METIS-277653
    • EWI-20200
    • IR-77339

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