Contact resistance measurement structures for high frequencies

Deepu Roy; Ralf M.T. Pijper; Luuk F. Tiemeijer; Robertus A.M. Wolters

doi:10.1109/ICMTS.2011.5976859

Contact resistance measurement structures for high frequencies

Deepu Roy
, Ralf M.T. Pijper
, Luuk F. Tiemeijer
, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

18 Downloads (Pure)

Abstract

Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metalto-PCM interface is derived for different contact impedances.

Original language	Undefined
Title of host publication	Proceedings of the 24th International Conference on Microelectronic Test Structures (ICMTS)
Place of Publication	USA
Publisher	IEEE
Pages	49-54
Number of pages	6
ISBN (Print)	978-1-4244-8527-7
DOIs	https://doi.org/10.1109/ICMTS.2011.5976859
Publication status	Published - 4 Apr 2011
Event	24th International Conference on Microelectronic Test Structures, ICMTS 2011 - Amsterdam, Netherlands Duration: 4 Apr 2011 → 7 Apr 2011 Conference number: 24 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

Publication series

Name
Publisher	IEEE Electron Devices Society
ISSN (Print)	1071-9032

Conference

Conference	24th International Conference on Microelectronic Test Structures, ICMTS 2011
Abbreviated title	ICMTS
Country/Territory	Netherlands
City	Amsterdam
Period	4/04/11 → 7/04/11
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

Keywords

METIS-277653
EWI-20200
IR-77339

Access to Document

10.1109/ICMTS.2011.5976859

http://eprints.eemcs.utwente.nl/secure2/20200/01/3.2_roy.pdf

Cite this

@inproceedings{6082db1f02b14bd6937af1f6de43d820,

title = "Contact resistance measurement structures for high frequencies",

abstract = "Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metalto-PCM interface is derived for different contact impedances.",

keywords = "METIS-277653, EWI-20200, IR-77339",

author = "Deepu Roy and Pijper, \{Ralf M.T.\} and Tiemeijer, \{Luuk F.\} and Wolters, \{Robertus A.M.\}",

year = "2011",

month = apr,

day = "4",

doi = "10.1109/ICMTS.2011.5976859",

language = "Undefined",

isbn = "978-1-4244-8527-7",

publisher = "IEEE",

pages = "49--54",

booktitle = "Proceedings of the 24th International Conference on Microelectronic Test Structures (ICMTS)",

address = "United States",

note = "24th International Conference on Microelectronic Test Structures, ICMTS 2011 ; Conference date: 04-04-2011 Through 07-04-2011",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf",

}

Roy, D, Pijper, RMT, Tiemeijer, LF & Wolters, RAM 2011, Contact resistance measurement structures for high frequencies. in Proceedings of the 24th International Conference on Microelectronic Test Structures (ICMTS). IEEE, USA, pp. 49-54, 24th International Conference on Microelectronic Test Structures, ICMTS 2011, Amsterdam, Netherlands, 4/04/11. https://doi.org/10.1109/ICMTS.2011.5976859

TY - GEN

T1 - Contact resistance measurement structures for high frequencies

AU - Roy, Deepu

AU - Pijper, Ralf M.T.

AU - Tiemeijer, Luuk F.

AU - Wolters, Robertus A.M.

N1 - Conference code: 24

PY - 2011/4/4

Y1 - 2011/4/4

N2 - Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metalto-PCM interface is derived for different contact impedances.

AB - Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metalto-PCM interface is derived for different contact impedances.

KW - METIS-277653

KW - EWI-20200

KW - IR-77339

U2 - 10.1109/ICMTS.2011.5976859

DO - 10.1109/ICMTS.2011.5976859

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SN - 978-1-4244-8527-7

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BT - Proceedings of the 24th International Conference on Microelectronic Test Structures (ICMTS)

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