Contact resistance of TiW to phase change material in the amorphous and crystalline states

D. Roy, M.A.A. in ‘t Zandt, R.A.M. Wolters, C.E. Timmering, J.H. Klootwijk

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)
6 Downloads (Pure)

Abstract

Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.
Original languageEnglish
Title of host publication2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages12-15
Number of pages4
ISBN (Print)978-1-4244-4953-8, 978-1-4244-4954-5 (CD)
DOIs
Publication statusPublished - 25 Oct 2009
Externally publishedYes
EventProceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA: Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009 -
Duration: 25 Oct 2009 → …

Conference

ConferenceProceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA
Period25/10/09 → …

Keywords

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