Contact resistance of TiW to phase change material in the amorphous and crystalline states

D. Roy, M.A.A. in ‘t Zandt, Robertus A.M. Wolters, C.E. Timmering, J.H. Klootwijk

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    7 Citations (Scopus)

    Abstract

    Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.
    Original languageUndefined
    Title of host publicationProceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009
    PublisherIEEE
    Pages12-15
    Number of pages4
    ISBN (Print)978-1-4244-4954-5
    DOIs
    Publication statusPublished - 25 Oct 2009
    EventProceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA: Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009 -
    Duration: 25 Oct 2009 → …

    Publication series

    Name
    PublisherIEEE

    Conference

    ConferenceProceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA
    Period25/10/09 → …

    Keywords

    • IR-76689
    • EWI-20002
    • METIS-276423

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