Contact resistance of TiW to phase change material in the amorphous and crystalline states

D. Roy; M.A.A. in ‘t Zandt; R.A.M. Wolters; C.E. Timmering; J.H. Klootwijk

doi:10.1109/NVMT.2009.5429780

Contact resistance of TiW to phase change material in the amorphous and crystalline states

D. Roy, M.A.A. in ‘t Zandt, R.A.M. Wolters, C.E. Timmering, J.H. Klootwijk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

17 Downloads (Pure)

Abstract

Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120Ã‚Â°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.

Original language	English
Title of host publication	2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	12-15
Number of pages	4
ISBN (Print)	978-1-4244-4953-8, 978-1-4244-4954-5 (CD)
DOIs	https://doi.org/10.1109/NVMT.2009.5429780
Publication status	Published - 25 Oct 2009
Externally published	Yes
Event	Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA: Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009 - Duration: 25 Oct 2009 → …

Conference

Conference	Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA
Period	25/10/09 → …

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n/a OA procedure

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10.1109/NVMT.2009.5429780

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title = "Contact resistance of TiW to phase change material in the amorphous and crystalline states",

abstract = "Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120{\~A}‚{\^A}°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.",

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author = "D. Roy and {in {\textquoteleft}t Zandt}, M.A.A. and R.A.M. Wolters and C.E. Timmering and J.H. Klootwijk",

note = "10.1109/NVMT.2009.5429780 ; Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA : Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009 ; Conference date: 25-10-2009",

year = "2009",

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doi = "10.1109/NVMT.2009.5429780",

language = "English",

isbn = "978-1-4244-4953-8",

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Roy, D, in ‘t Zandt, MAA, Wolters, RAM, Timmering, CE & Klootwijk, JH 2009, Contact resistance of TiW to phase change material in the amorphous and crystalline states. in 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS). IEEE, Piscataway, NJ, pp. 12-15, Proceedings of 10th Non-Volatile Memory Technology Symposium (NVMTS) 2009, Portland, OR, USA, 25/10/09. https://doi.org/10.1109/NVMT.2009.5429780

Contact resistance of TiW to phase change material in the amorphous and crystalline states. / Roy, D.; in ‘t Zandt, M.A.A.; Wolters, R.A.M. et al.
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS). Piscataway, NJ: IEEE, 2009. p. 12-15.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Contact resistance of TiW to phase change material in the amorphous and crystalline states

AU - Roy, D.

AU - in ‘t Zandt, M.A.A.

AU - Wolters, R.A.M.

AU - Timmering, C.E.

AU - Klootwijk, J.H.

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N2 - Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120Ã‚Â°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.

AB - Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120Ã‚Â°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.

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ER -

Contact resistance of TiW to phase change material in the amorphous and crystalline states

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