Abstract
In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ϿC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.
Original language | Undefined |
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Title of host publication | 2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc) |
Place of Publication | USA |
Publisher | IEEE |
Pages | 87-90 |
Number of pages | 4 |
ISBN (Print) | 978-1-4577-0708-7 |
DOIs | |
Publication status | Published - 11 Sept 2011 |
Event | 41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland Duration: 12 Sept 2011 → 16 Sept 2011 Conference number: 41 |
Publication series
Name | |
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Publisher | IEEE Solid-State Circuits Society |
Conference
Conference | 41st European Solid-State Device Research Conference, ESSDERC 2011 |
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Abbreviated title | ESSDERC |
Country/Territory | Finland |
City | Helsinki |
Period | 12/09/11 → 16/09/11 |
Keywords
- METIS-284903
- EWI-20555
- IR-79876