Contact resistance of TiW to ultra-thin phase change material layers

Deepu Roy, J.H. Klootwijk, Dirk J Gravesteijn, Robertus A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ϿC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.
    Original languageUndefined
    Title of host publication2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Pages87-90
    Number of pages4
    ISBN (Print)978-1-4577-0708-7
    DOIs
    Publication statusPublished - 11 Sep 2011
    Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
    Duration: 12 Sep 201116 Sep 2011
    Conference number: 41

    Publication series

    Name
    PublisherIEEE Solid-State Circuits Society

    Conference

    Conference41st European Solid-State Device Research Conference, ESSDERC 2011
    Abbreviated titleESSDERC
    CountryFinland
    CityHelsinki
    Period12/09/1116/09/11

    Keywords

    • METIS-284903
    • EWI-20555
    • IR-79876

    Cite this

    Roy, D., Klootwijk, J. H., Gravesteijn, D. J., & Wolters, R. A. M. (2011). Contact resistance of TiW to ultra-thin phase change material layers. In 2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc) (pp. 87-90). USA: IEEE Solid-State Circuits Society. https://doi.org/10.1109/ESSDERC.2011.6044228