Contact resistance of TiW to ultra-thin phase change material layers

Deepu Roy; J.H. Klootwijk; Dirk J Gravesteijn; Robertus A.M. Wolters

doi:10.1109/ESSDERC.2011.6044228

Contact resistance of TiW to ultra-thin phase change material layers

Deepu Roy, J.H. Klootwijk, Dirk J Gravesteijn, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

7 Downloads (Pure)

Abstract

In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ϿC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.

Original language	Undefined
Title of host publication	2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)
Place of Publication	USA
Publisher	IEEE
Pages	87-90
Number of pages	4
ISBN (Print)	978-1-4577-0708-7
DOIs	https://doi.org/10.1109/ESSDERC.2011.6044228
Publication status	Published - 11 Sept 2011
Event	41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland Duration: 12 Sept 2011 → 16 Sept 2011 Conference number: 41

Publication series

Name
Publisher	IEEE Solid-State Circuits Society

Conference

Conference	41st European Solid-State Device Research Conference, ESSDERC 2011
Abbreviated title	ESSDERC
Country/Territory	Finland
City	Helsinki
Period	12/09/11 → 16/09/11

Keywords

METIS-284903
EWI-20555
IR-79876

Access to Document

10.1109/ESSDERC.2011.6044228

http://eprints.eemcs.utwente.nl/secure2/20555/01/Deepu.pdf

Cite this

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title = "Contact resistance of TiW to ultra-thin phase change material layers",

abstract = "In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ϿC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.",

keywords = "METIS-284903, EWI-20555, IR-79876",

author = "Deepu Roy and J.H. Klootwijk and Gravesteijn, {Dirk J} and Wolters, {Robertus A.M.}",

note = "10.1109/ESSDERC.2011.6044228 ; 41st European Solid-State Device Research Conference, ESSDERC 2011 ; Conference date: 12-09-2011 Through 16-09-2011",

year = "2011",

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day = "11",

doi = "10.1109/ESSDERC.2011.6044228",

language = "Undefined",

isbn = "978-1-4577-0708-7",

publisher = "IEEE",

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booktitle = "2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)",

address = "United States",

}

Roy, D, Klootwijk, JH, Gravesteijn, DJ & Wolters, RAM 2011, Contact resistance of TiW to ultra-thin phase change material layers. in 2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc). IEEE, USA, pp. 87-90, 41st European Solid-State Device Research Conference, ESSDERC 2011, Helsinki, Finland, 12/09/11. https://doi.org/10.1109/ESSDERC.2011.6044228

TY - GEN

T1 - Contact resistance of TiW to ultra-thin phase change material layers

AU - Roy, Deepu

AU - Klootwijk, J.H.

AU - Gravesteijn, Dirk J

AU - Wolters, Robertus A.M.

N1 - Conference code: 41

PY - 2011/9/11

Y1 - 2011/9/11

N2 - In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ϿC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.

AB - In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ϿC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.

KW - METIS-284903

KW - EWI-20555

KW - IR-79876

U2 - 10.1109/ESSDERC.2011.6044228

DO - 10.1109/ESSDERC.2011.6044228

M3 - Conference contribution

SN - 978-1-4577-0708-7

SP - 87

EP - 90

BT - 2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)

PB - IEEE

CY - USA

T2 - 41st European Solid-State Device Research Conference, ESSDERC 2011

Y2 - 12 September 2011 through 16 September 2011

ER -