Contact resistance of TiW to ultra-thin phase change material layers

Deepu Roy, J.H. Klootwijk, Dirk J Gravesteijn, Robertus A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)


    In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ϿC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.
    Original languageUndefined
    Title of host publication2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc)
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Number of pages4
    ISBN (Print)978-1-4577-0708-7
    Publication statusPublished - 11 Sep 2011
    Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
    Duration: 12 Sep 201116 Sep 2011
    Conference number: 41

    Publication series

    PublisherIEEE Solid-State Circuits Society


    Conference41st European Solid-State Device Research Conference, ESSDERC 2011
    Abbreviated titleESSDERC


    • METIS-284903
    • EWI-20555
    • IR-79876

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