Controlled growth of non-uniform arsenic profiles in silicon reduced-pressure chemical vapor deposition epitaxial layers

M. Popadić; T.L.M. Scholtes; W. de Boer; F. Sarubbi; L.K. Nanver

doi:10.1007/s11664-009-0897-x

Controlled growth of non-uniform arsenic profiles in silicon reduced-pressure chemical vapor deposition epitaxial layers

M. Popadić^*, T.L.M. Scholtes, W. de Boer, F. Sarubbi, L.K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies this mechanism with enough detail to be successfully applied to the accurate growth of different profiles, including the ascending x ^-2 doping profiles. For rapidly descending profiles the segregated As surface layer must be removed, e.g., by ex situ cleaning and Marangoni drying before further Si epitaxy.

Original language	English
Pages (from-to)	2323-2328
Number of pages	6
Journal	Journal of electronic materials
Volume	38
Issue number	11
Early online date	31 Jul 2009
DOIs	https://doi.org/10.1007/s11664-009-0897-x
Publication status	Published - Nov 2009
Externally published	Yes

Keywords

As doping
Reduced-pressure chemical vapor deposition (RPCVD)
Si epitaxy
Surface segregation
Varactor diodes

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10.1007/s11664-009-0897-x

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title = "Controlled growth of non-uniform arsenic profiles in silicon reduced-pressure chemical vapor deposition epitaxial layers",

abstract = "An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies this mechanism with enough detail to be successfully applied to the accurate growth of different profiles, including the ascending x -2 doping profiles. For rapidly descending profiles the segregated As surface layer must be removed, e.g., by ex situ cleaning and Marangoni drying before further Si epitaxy.",

keywords = "As doping, Reduced-pressure chemical vapor deposition (RPCVD), Si epitaxy, Surface segregation, Varactor diodes",

author = "M. Popadi{\'c} and T.L.M. Scholtes and {de Boer}, W. and F. Sarubbi and L.K. Nanver",

year = "2009",

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doi = "10.1007/s11664-009-0897-x",

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T1 - Controlled growth of non-uniform arsenic profiles in silicon reduced-pressure chemical vapor deposition epitaxial layers

AU - Popadić, M.

AU - Scholtes, T.L.M.

AU - de Boer, W.

AU - Sarubbi, F.

AU - Nanver, L.K.

PY - 2009/11

Y1 - 2009/11

N2 - An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies this mechanism with enough detail to be successfully applied to the accurate growth of different profiles, including the ascending x -2 doping profiles. For rapidly descending profiles the segregated As surface layer must be removed, e.g., by ex situ cleaning and Marangoni drying before further Si epitaxy.

AB - An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies this mechanism with enough detail to be successfully applied to the accurate growth of different profiles, including the ascending x -2 doping profiles. For rapidly descending profiles the segregated As surface layer must be removed, e.g., by ex situ cleaning and Marangoni drying before further Si epitaxy.

KW - As doping

KW - Reduced-pressure chemical vapor deposition (RPCVD)

KW - Si epitaxy

KW - Surface segregation

KW - Varactor diodes

U2 - 10.1007/s11664-009-0897-x

DO - 10.1007/s11664-009-0897-x

M3 - Article

AN - SCOPUS:70349878371

SN - 0361-5235

VL - 38

SP - 2323

EP - 2328

JO - Journal of electronic materials

JF - Journal of electronic materials

IS - 11

ER -

Controlled growth of non-uniform arsenic profiles in silicon reduced-pressure chemical vapor deposition epitaxial layers

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Keywords

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