Controlled growth of non-uniform arsenic profiles in silicon reduced-pressure chemical vapor deposition epitaxial layers

M. Popadić*, T.L.M. Scholtes, W. De Boer, F. Sarubbi, L.K. Nanver

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
4 Downloads (Pure)

Abstract

An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies this mechanism with enough detail to be successfully applied to the accurate growth of different profiles, including the ascending x -2 doping profiles. For rapidly descending profiles the segregated As surface layer must be removed, e.g., by ex situ cleaning and Marangoni drying before further Si epitaxy.

Original languageEnglish
Pages (from-to)2323-2328
Number of pages6
JournalJournal of electronic materials
Volume38
Issue number11
Early online date31 Jul 2009
DOIs
Publication statusPublished - Nov 2009
Externally publishedYes

Keywords

  • As doping
  • Reduced-pressure chemical vapor deposition (RPCVD)
  • Si epitaxy
  • Surface segregation
  • Varactor diodes

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