Controlled growth of PbZr0.52Ti0.48O3 using nanosheet coated Si (001)

Anuj Chopra; Muharrem Bayraktar; Fred Bijkerk; Guus Rijnders

doi:10.1016/j.tsf.2015.04.039

Controlled growth of PbZr_0.52Ti_0.48O₃ using nanosheet coated Si (001)

Anuj Chopra, Muharrem Bayraktar, Fred Bijkerk, Guus Rijnders^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Preferentially (001) and (110)-oriented PbZr_0.52Ti_0.48O₃ (PZT) films with a LaNiO₃ (LNO) bottom electrode were deposited on buffered Si (001) substrates using pulsed laser deposition. This high degree of control on growth orientation of these LNO and PZT thin films was achieved by using Ca₂Nb₃O₁₀ (CNO) and Ti_0.87O₂ nanosheets as buffer layers deposited on the Si by the Langmuir-Blodgett technique. The measured remnant polarization (P_r) and piezoelectric response of the (001)-oriented PZT films on CNO-nanosheets are 16 μC/cm² and 120 pm/V, respectively. These values are comparable to the values reported for the epitaxial PZT films grown on CeO₂/yttria-stabilized zirconia (YSZ) buffered Si substrates while the maximum deposition temperature is lowered from 800 °C to 600 °C which are the typical deposition temperatures of YSZ and PZT respectively. This lower maximum deposition temperature shows that the integration of PZT films by the nanosheet buffer layers is not limited to Si, but can be extended to substrates with low processing temperatures like glass for various device applications in the future.

Original language	English
Pages (from-to)	13-16
Number of pages	4
Journal	Thin solid films
Volume	589
DOIs	https://doi.org/10.1016/j.tsf.2015.04.039
Publication status	Published - 31 Aug 2015

Keywords

Lead zirconate titanate
Nanosheets
Piezoelectric properties
Pulsed laser deposition
Silicon
Thin films
2023 OA procedure

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10.1016/j.tsf.2015.04.039

ArticleFinal published version, 1.21 MBLicence: Taverne

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title = "Controlled growth of PbZr0.52Ti0.48O3 using nanosheet coated Si (001)",

abstract = "Preferentially (001) and (110)-oriented PbZr0.52Ti0.48O3 (PZT) films with a LaNiO3 (LNO) bottom electrode were deposited on buffered Si (001) substrates using pulsed laser deposition. This high degree of control on growth orientation of these LNO and PZT thin films was achieved by using Ca2Nb3O10 (CNO) and Ti0.87O2 nanosheets as buffer layers deposited on the Si by the Langmuir-Blodgett technique. The measured remnant polarization (Pr) and piezoelectric response of the (001)-oriented PZT films on CNO-nanosheets are 16 μC/cm2 and 120 pm/V, respectively. These values are comparable to the values reported for the epitaxial PZT films grown on CeO2/yttria-stabilized zirconia (YSZ) buffered Si substrates while the maximum deposition temperature is lowered from 800 °C to 600 °C which are the typical deposition temperatures of YSZ and PZT respectively. This lower maximum deposition temperature shows that the integration of PZT films by the nanosheet buffer layers is not limited to Si, but can be extended to substrates with low processing temperatures like glass for various device applications in the future.",

keywords = "Lead zirconate titanate, Nanosheets, Piezoelectric properties, Pulsed laser deposition, Silicon, Thin films, 2023 OA procedure",

author = "Anuj Chopra and Muharrem Bayraktar and Fred Bijkerk and Guus Rijnders",

note = "Funding Information: This research program is funded by “ Stichting Technologie en Wetenschap (STW) ” under the contract 10448 with the project name “Smart Multilayer Interactive Optics for Lithography at Extreme UV wavelengths (SMILE)”. The authors would like to thank Prof. J. E. ten Elshof and Mr. Maarten Nijland for providing the nanosheets and Dr. Minh Nguyen for Pt coating. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = aug,

day = "31",

doi = "10.1016/j.tsf.2015.04.039",

language = "English",

volume = "589",

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journal = "Thin solid films",

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T1 - Controlled growth of PbZr0.52Ti0.48O3 using nanosheet coated Si (001)

AU - Chopra, Anuj

AU - Bayraktar, Muharrem

AU - Bijkerk, Fred

AU - Rijnders, Guus

N1 - Funding Information: This research program is funded by “ Stichting Technologie en Wetenschap (STW) ” under the contract 10448 with the project name “Smart Multilayer Interactive Optics for Lithography at Extreme UV wavelengths (SMILE)”. The authors would like to thank Prof. J. E. ten Elshof and Mr. Maarten Nijland for providing the nanosheets and Dr. Minh Nguyen for Pt coating. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/8/31

Y1 - 2015/8/31

N2 - Preferentially (001) and (110)-oriented PbZr0.52Ti0.48O3 (PZT) films with a LaNiO3 (LNO) bottom electrode were deposited on buffered Si (001) substrates using pulsed laser deposition. This high degree of control on growth orientation of these LNO and PZT thin films was achieved by using Ca2Nb3O10 (CNO) and Ti0.87O2 nanosheets as buffer layers deposited on the Si by the Langmuir-Blodgett technique. The measured remnant polarization (Pr) and piezoelectric response of the (001)-oriented PZT films on CNO-nanosheets are 16 μC/cm2 and 120 pm/V, respectively. These values are comparable to the values reported for the epitaxial PZT films grown on CeO2/yttria-stabilized zirconia (YSZ) buffered Si substrates while the maximum deposition temperature is lowered from 800 °C to 600 °C which are the typical deposition temperatures of YSZ and PZT respectively. This lower maximum deposition temperature shows that the integration of PZT films by the nanosheet buffer layers is not limited to Si, but can be extended to substrates with low processing temperatures like glass for various device applications in the future.

AB - Preferentially (001) and (110)-oriented PbZr0.52Ti0.48O3 (PZT) films with a LaNiO3 (LNO) bottom electrode were deposited on buffered Si (001) substrates using pulsed laser deposition. This high degree of control on growth orientation of these LNO and PZT thin films was achieved by using Ca2Nb3O10 (CNO) and Ti0.87O2 nanosheets as buffer layers deposited on the Si by the Langmuir-Blodgett technique. The measured remnant polarization (Pr) and piezoelectric response of the (001)-oriented PZT films on CNO-nanosheets are 16 μC/cm2 and 120 pm/V, respectively. These values are comparable to the values reported for the epitaxial PZT films grown on CeO2/yttria-stabilized zirconia (YSZ) buffered Si substrates while the maximum deposition temperature is lowered from 800 °C to 600 °C which are the typical deposition temperatures of YSZ and PZT respectively. This lower maximum deposition temperature shows that the integration of PZT films by the nanosheet buffer layers is not limited to Si, but can be extended to substrates with low processing temperatures like glass for various device applications in the future.

KW - Lead zirconate titanate

KW - Nanosheets

KW - Piezoelectric properties

KW - Pulsed laser deposition

KW - Silicon

KW - Thin films

KW - 2023 OA procedure

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U2 - 10.1016/j.tsf.2015.04.039

DO - 10.1016/j.tsf.2015.04.039

M3 - Article

SN - 0040-6090

VL - 589

SP - 13

EP - 16

JO - Thin solid films

JF - Thin solid films

ER -

Controlled growth of PbZr_0.52Ti_0.48O₃ using nanosheet coated Si (001)

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Keywords

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