Abstract
We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.
Original language | English |
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Pages (from-to) | 743-747 |
Number of pages | 5 |
Journal | Organic electronics |
Volume | 11 |
Issue number | 5 |
DOIs | |
Publication status | Published - 22 Jan 2010 |
Keywords
- EWI-19136
- Spintronics
- Organic single-crystal
- METIS-279128
- Ferromagnetic electrodes
- Field-effect transistor
- IR-75540