Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

W.J.M. Naber; M.F. Craciun; J.H.J. Lemmens; A.H. Arkenbout; T.T.M. Palstra; A.F. Morpurgo; Wilfred Gerard van der Wiel

doi:10.1016/j.orgel.2010.01.013

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

W.J.M. Naber, M.F. Craciun, J.H.J. Lemmens, A.H. Arkenbout, T.T.M. Palstra, A.F. Morpurgo, Wilfred Gerard van der Wiel

Research output: Contribution to journal › Article › Academic

13 Citations (Scopus)

Abstract

We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

Original language	English
Pages (from-to)	743-747
Number of pages	5
Journal	Organic electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2010.01.013
Publication status	Published - 22 Jan 2010

Keywords

EWI-19136
Spintronics
Organic single-crystal
METIS-279128
Ferromagnetic electrodes
Field-effect transistor
IR-75540

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10.1016/j.orgel.2010.01.013

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title = "Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors",

abstract = "We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.",

keywords = "EWI-19136, Spintronics, Organic single-crystal, METIS-279128, Ferromagnetic electrodes, Field-effect transistor, IR-75540",

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doi = "10.1016/j.orgel.2010.01.013",

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T1 - Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

AU - Naber, W.J.M.

AU - Craciun, M.F.

AU - Lemmens, J.H.J.

AU - Arkenbout, A.H.

AU - Palstra, T.T.M.

AU - Morpurgo, A.F.

AU - van der Wiel, Wilfred Gerard

N1 - eemcs-eprint-19136

PY - 2010/1/22

Y1 - 2010/1/22

N2 - We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

AB - We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

KW - EWI-19136

KW - Spintronics

KW - Organic single-crystal

KW - METIS-279128

KW - Ferromagnetic electrodes

KW - Field-effect transistor

KW - IR-75540

U2 - 10.1016/j.orgel.2010.01.013

DO - 10.1016/j.orgel.2010.01.013

M3 - Article

VL - 11

SP - 743

EP - 747

JO - Organic electronics

JF - Organic electronics

SN - 1566-1199

IS - 5

ER -

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Abstract

Keywords

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