Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

W.J.M. Naber, M.F. Craciun, J.H.J. Lemmens, A.H. Arkenbout, T.T.M. Palstra, A.F. Morpurgo, Wilfred Gerard van der Wiel

    Research output: Contribution to journalArticleAcademic

    12 Citations (Scopus)

    Abstract

    We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.
    Original languageEnglish
    Pages (from-to)743-747
    Number of pages5
    JournalOrganic electronics
    Volume11
    Issue number5
    DOIs
    Publication statusPublished - 22 Jan 2010

    Keywords

    • EWI-19136
    • Spintronics
    • Organic single-crystal
    • METIS-279128
    • Ferromagnetic electrodes
    • Field-effect transistor
    • IR-75540

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