Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

W.J.M. Naber; M.F. Craciun; J.H.J. Lemmens; A.H. Arkenbout; T.T.M. Palstra; A.F. Morpurgo; W.G. van der Wiel

doi:10.1016/j.orgel.2010.01.013

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

W.J.M. Naber^*, M.F. Craciun, J.H.J. Lemmens, A.H. Arkenbout, T.T.M. Palstra, A.F. Morpurgo, W.G. van der Wiel

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic

13 Citations (Scopus)

20 Downloads (Pure)

Abstract

We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

Original language	English
Pages (from-to)	743-747
Number of pages	5
Journal	Organic electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2010.01.013
Publication status	Published - 22 Jan 2010

Keywords

Spintronics
Organic single-crystal
Ferromagnetic electrodes
Field-effect transistor
2023 OA procedure

Access to Document

10.1016/j.orgel.2010.01.013

ArticleFinal published version, 283 KBLicence: Taverne

Cite this

@article{04df1075c22542498caf2ccd9bd15cfa,

title = "Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors",

abstract = "We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.",

keywords = "Spintronics, Organic single-crystal, Ferromagnetic electrodes, Field-effect transistor, 2023 OA procedure",

author = "W.J.M. Naber and M.F. Craciun and J.H.J. Lemmens and A.H. Arkenbout and T.T.M. Palstra and A.F. Morpurgo and \{van der Wiel\}, W.G.",

year = "2010",

month = jan,

day = "22",

doi = "10.1016/j.orgel.2010.01.013",

language = "English",

volume = "11",

pages = "743--747",

journal = "Organic electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "5",

}

TY - JOUR

T1 - Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

AU - Naber, W.J.M.

AU - Craciun, M.F.

AU - Lemmens, J.H.J.

AU - Arkenbout, A.H.

AU - Palstra, T.T.M.

AU - Morpurgo, A.F.

AU - van der Wiel, W.G.

PY - 2010/1/22

Y1 - 2010/1/22

N2 - We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

AB - We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

KW - Spintronics

KW - Organic single-crystal

KW - Ferromagnetic electrodes

KW - Field-effect transistor

KW - 2023 OA procedure

U2 - 10.1016/j.orgel.2010.01.013

DO - 10.1016/j.orgel.2010.01.013

M3 - Article

SN - 1566-1199

VL - 11

SP - 743

EP - 747

JO - Organic electronics

JF - Organic electronics

IS - 5

ER -

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Abstract

Keywords

Access to Document

Fingerprint

Cite this