Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance

Minh D. Nguyen* (Corresponding Author), Chi T.Q. Nguyen, Hung N. Vu, Guus Rijnders

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

27 Citations (Scopus)
1 Downloads (Pure)

Abstract

The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U reco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (U reco =21.9J/cm3, η =87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (U reco =17.6J/cm3, η =82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant U reco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which U reco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.

Original languageEnglish
Pages (from-to)95-103
Number of pages9
JournalJournal of the European Ceramic Society
Volume38
Issue number1
DOIs
Publication statusPublished - Jan 2018

Keywords

  • Break-down strengths
  • Energy-storage performances
  • Microstructure
  • Reloxor ferroelectrics
  • Thin films

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