Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance

Minh D. Nguyen (Corresponding Author), Chi T.Q. Nguyen, Hung N. Vu, Guus Rijnders

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Abstract

The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U reco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (U reco =21.9J/cm3, η =87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (U reco =17.6J/cm3, η =82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant U reco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which U reco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.

Original languageEnglish
Pages (from-to)95-103
Number of pages9
JournalJournal of the European Ceramic Society
Volume38
Issue number1
DOIs
Publication statusPublished - Jan 2018

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Ferroelectric thin films
Film growth
Energy storage
Microstructure
Epitaxial films
Nanosheets
Buffer layers
Pulsed laser deposition
Ferroelectric materials
Thermodynamic stability
Fatigue of materials
Polarization
Thin films
Electrodes

Keywords

  • Break-down strengths
  • Energy-storage performances
  • Microstructure
  • Reloxor ferroelectrics
  • Thin films

Cite this

@article{3ce78a1947374cb6a01abeb47b742ccf,
title = "Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance",
abstract = "The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U reco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6{\%} obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (U reco =21.9J/cm3, η =87.8{\%}) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (U reco =17.6J/cm3, η =82.6{\%}) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant U reco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which U reco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.",
keywords = "Break-down strengths, Energy-storage performances, Microstructure, Reloxor ferroelectrics, Thin films",
author = "Nguyen, {Minh D.} and Nguyen, {Chi T.Q.} and Vu, {Hung N.} and Guus Rijnders",
year = "2018",
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doi = "10.1016/j.jeurceramsoc.2017.08.027",
language = "English",
volume = "38",
pages = "95--103",
journal = "Journal of the European Ceramic Society",
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}

Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance. / Nguyen, Minh D. (Corresponding Author); Nguyen, Chi T.Q.; Vu, Hung N.; Rijnders, Guus.

In: Journal of the European Ceramic Society, Vol. 38, No. 1, 01.2018, p. 95-103.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance

AU - Nguyen, Minh D.

AU - Nguyen, Chi T.Q.

AU - Vu, Hung N.

AU - Rijnders, Guus

PY - 2018/1

Y1 - 2018/1

N2 - The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U reco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (U reco =21.9J/cm3, η =87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (U reco =17.6J/cm3, η =82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant U reco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which U reco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.

AB - The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U reco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (U reco =21.9J/cm3, η =87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (U reco =17.6J/cm3, η =82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant U reco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which U reco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.

KW - Break-down strengths

KW - Energy-storage performances

KW - Microstructure

KW - Reloxor ferroelectrics

KW - Thin films

U2 - 10.1016/j.jeurceramsoc.2017.08.027

DO - 10.1016/j.jeurceramsoc.2017.08.027

M3 - Article

VL - 38

SP - 95

EP - 103

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

SN - 0955-2219

IS - 1

ER -