TY - JOUR
T1 - Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance
AU - Nguyen, Minh D.
AU - Nguyen, Chi T.Q.
AU - Vu, Hung N.
AU - Rijnders, Guus
PY - 2018/1
Y1 - 2018/1
N2 - The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U reco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (U reco =21.9J/cm3, η =87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (U reco =17.6J/cm3, η =82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant U reco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which U reco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.
AB - The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U reco) of 23.2J/cm3 and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (U reco =21.9J/cm3, η =87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (U reco =17.6J/cm3, η =82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500kV/cm and 1kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500kV/cm, a giant U reco value of 40.2J/cm3 was obtained for the epitaxial PLZT film, in which U reco values of 28.4J/cm3 (at BDS of 2000kV/cm) and 20.2J/cm3 (at BDS of 1700kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.
KW - Break-down strengths
KW - Energy-storage performances
KW - Microstructure
KW - Reloxor ferroelectrics
KW - Thin films
U2 - 10.1016/j.jeurceramsoc.2017.08.027
DO - 10.1016/j.jeurceramsoc.2017.08.027
M3 - Article
AN - SCOPUS:85028346593
VL - 38
SP - 95
EP - 103
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
IS - 1
ER -