Controlling the dopant dose in silicon by mixed-monolayer doping

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30 Citations (Scopus)

Abstract

Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.
Original languageEnglish
Pages (from-to)3231-3236
Number of pages6
JournalACS applied materials & interfaces
Volume7
Issue number5
DOIs
Publication statusPublished - 21 Jan 2015

Keywords

  • EWI-26494
  • electrical
  • organic
  • IR-98293
  • doping dose
  • Monolayer doping
  • Silicon
  • mixed monolayers

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