Controlling the dopant dose in silicon by mixed-monolayer doping

Research output: Contribution to journalArticleAcademicpeer-review

24 Citations (Scopus)

Abstract

Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.
Original languageEnglish
Pages (from-to)3231-3236
Number of pages6
JournalACS applied materials & interfaces
Volume7
Issue number5
DOIs
Publication statusPublished - 21 Jan 2015

Fingerprint

Silicon
Monolayers
Doping (additives)
Alkenes
Olefins
Spectroscopy
Hydrosilylation
Boron
Auger electron spectroscopy
Angle measurement
Phosphorus
Contact angle
Hydrogen
Photons
Tuning
Ions
X rays
Substrates

Keywords

  • EWI-26494
  • electrical
  • organic
  • IR-98293
  • doping dose
  • Monolayer doping
  • Silicon
  • mixed monolayers

Cite this

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title = "Controlling the dopant dose in silicon by mixed-monolayer doping",
abstract = "Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.",
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author = "Liang Ye and Pujari, {Sidharam P.} and Han Zuilhof and Tibor Kudernac and {de Jong}, {Machiel Pieter} and {van der Wiel}, {Wilfred Gerard} and Jurriaan Huskens",
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language = "English",
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pages = "3231--3236",
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issn = "1944-8244",
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Controlling the dopant dose in silicon by mixed-monolayer doping. / Ye, Liang; Pujari, Sidharam P.; Zuilhof, Han; Kudernac, Tibor; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; Huskens, Jurriaan.

In: ACS applied materials & interfaces, Vol. 7, No. 5, 21.01.2015, p. 3231-3236.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Controlling the dopant dose in silicon by mixed-monolayer doping

AU - Ye, Liang

AU - Pujari, Sidharam P.

AU - Zuilhof, Han

AU - Kudernac, Tibor

AU - de Jong, Machiel Pieter

AU - van der Wiel, Wilfred Gerard

AU - Huskens, Jurriaan

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AB - Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.

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KW - organic

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