@article{50b49a5d6d794fa682607ca173d69fde,
title = "Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate",
abstract = "We demonstrate the controlled growth of Bi(110) and Bi(111) films on an α-Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film–vacuum as well as the film–substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.",
keywords = "22/4 OA procedure",
author = "Maciej Jankowski and Daniel Kaminski and Kurt Vergeer and Marta Mirolo and Francesca Carla and Guus Rijnders and Bollmann, {Tjeerd R.J.}",
year = "2017",
doi = "10.1088/1361-6528/aa61dd",
language = "English",
volume = "28",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "Institute of Physics (IOP)",
number = "15",
}