Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

M. Jankowski; D Kaminski; Kurt Vergeer; M. Mirolo; F. Carla; Augustinus J.H.M. Rijnders; Tjeerd Rogier Johannes Bollmann

doi:10.1088/1361-6528/aa61dd

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

M. Jankowski, D Kaminski, Kurt Vergeer, M. Mirolo, F. Carla, Augustinus J.H.M. Rijnders, Tjeerd Rogier Johannes Bollmann

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

Abstract

We demonstrate the controlled growth of Bi(110) and Bi(111) films on an α-Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film–vacuum as well as the film–substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.

Original language	English
Article number	155602
Number of pages	8
Journal	Nanotechnology
Volume	28
Issue number	15
DOIs	https://doi.org/10.1088/1361-6528/aa61dd
Publication status	Published - 2017

Keywords

METIS-321924
IR-104616

Access to Document

10.1088/1361-6528/aa61dd

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title = "Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate",

abstract = "We demonstrate the controlled growth of Bi(110) and Bi(111) films on an α-Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film–vacuum as well as the film–substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.",

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author = "M. Jankowski and D Kaminski and Kurt Vergeer and M. Mirolo and F. Carla and Rijnders, {Augustinus J.H.M.} and Bollmann, {Tjeerd Rogier Johannes}",

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language = "English",

volume = "28",

journal = "Nanotechnology",

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TY - JOUR

T1 - Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

AU - Jankowski, M.

AU - Kaminski, D

AU - Vergeer, Kurt

AU - Mirolo, M.

AU - Carla, F.

AU - Rijnders, Augustinus J.H.M.

AU - Bollmann, Tjeerd Rogier Johannes

PY - 2017

Y1 - 2017

N2 - We demonstrate the controlled growth of Bi(110) and Bi(111) films on an α-Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film–vacuum as well as the film–substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.

AB - We demonstrate the controlled growth of Bi(110) and Bi(111) films on an α-Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film–vacuum as well as the film–substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.

KW - METIS-321924

KW - IR-104616

U2 - 10.1088/1361-6528/aa61dd

DO - 10.1088/1361-6528/aa61dd

M3 - Article

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

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