Abstract
We demonstrate the controlled growth of Bi(110) and Bi(111) films on an α-Al2O3(0001) substrate by surface x-ray diffraction and x-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K, unanticipated pseudo-cubic Bi(110) films are grown with thicknesses ranging from a few to tens of nanometers. The roughness at the film–vacuum as well as the film–substrate interface, can be reduced by mild heating, where a crystallographic orientation transition of Bi(110) towards Bi(111) is observed at 400 K. From 450 K onwards high quality ultrasmooth Bi(111) films form. Growth around the transition temperature results in the growth of competing Bi(110) and Bi(111) domains.
Original language | English |
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Article number | 155602 |
Number of pages | 8 |
Journal | Nanotechnology |
Volume | 28 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2017 |
Keywords
- METIS-321924
- IR-104616