Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene

R. Friedlein, A. Fleurence, K. Aoyagi, Machiel Pieter de Jong, B. Van Hao, Frank Bert Wiggers, S. Yoshimoto, T. Koitaya, S. Shimizu, H. Noritake, K. Mukai, J. Yoshinobu, Y. Yamada-Takamura

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    From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.
    Original languageUndefined
    Pages (from-to)1-6
    Number of pages6
    JournalThe Journal of chemical physics
    Issue number18
    Publication statusPublished - 12 May 2014


    • EWI-24742
    • epitaxial layersEXAFSphotoelectron spectrarelaxationscanning tunneling microscopysiliconXANES
    • XANES
    • Silicon
    • EXAFS
    • IR-91075
    • photoelectron spectra
    • relaxation
    • Scanning tunneling microscopy
    • METIS-304100
    • epitaxial layers

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