Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene

R. Friedlein, A. Fleurence, K. Aoyagi, Machiel Pieter de Jong, B. Van Hao, Frank Bert Wiggers, S. Yoshimoto, T. Koitaya, S. Shimizu, H. Noritake, K. Mukai, J. Yoshinobu, Y. Yamada-Takamura

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

Abstract

From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.
Original languageUndefined
Pages (from-to)1-6
Number of pages6
JournalJournal of chemical physics
Volume140
Issue number18
DOIs
Publication statusPublished - 12 May 2014

Keywords

  • EWI-24742
  • epitaxial layersEXAFSphotoelectron spectrarelaxationscanning tunneling microscopysiliconXANES
  • XANES
  • Silicon
  • EXAFS
  • IR-91075
  • photoelectron spectra
  • relaxation
  • Scanning tunneling microscopy
  • METIS-304100
  • epitaxial layers

Cite this

Friedlein, R., Fleurence, A., Aoyagi, K., de Jong, M. P., Van Hao, B., Wiggers, F. B., ... Yamada-Takamura, Y. (2014). Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene. Journal of chemical physics, 140(18), 1-6. https://doi.org/10.1063/1.4875075
Friedlein, R. ; Fleurence, A. ; Aoyagi, K. ; de Jong, Machiel Pieter ; Van Hao, B. ; Wiggers, Frank Bert ; Yoshimoto, S. ; Koitaya, T. ; Shimizu, S. ; Noritake, H. ; Mukai, K. ; Yoshinobu, J. ; Yamada-Takamura, Y. / Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene. In: Journal of chemical physics. 2014 ; Vol. 140, No. 18. pp. 1-6.
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abstract = "From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.",
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author = "R. Friedlein and A. Fleurence and K. Aoyagi and {de Jong}, {Machiel Pieter} and {Van Hao}, B. and Wiggers, {Frank Bert} and S. Yoshimoto and T. Koitaya and S. Shimizu and H. Noritake and K. Mukai and J. Yoshinobu and Y. Yamada-Takamura",
note = "eemcs-eprint-24742",
year = "2014",
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day = "12",
doi = "10.1063/1.4875075",
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Friedlein, R, Fleurence, A, Aoyagi, K, de Jong, MP, Van Hao, B, Wiggers, FB, Yoshimoto, S, Koitaya, T, Shimizu, S, Noritake, H, Mukai, K, Yoshinobu, J & Yamada-Takamura, Y 2014, 'Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene' Journal of chemical physics, vol. 140, no. 18, pp. 1-6. https://doi.org/10.1063/1.4875075

Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene. / Friedlein, R.; Fleurence, A.; Aoyagi, K.; de Jong, Machiel Pieter; Van Hao, B.; Wiggers, Frank Bert; Yoshimoto, S.; Koitaya, T.; Shimizu, S.; Noritake, H.; Mukai, K.; Yoshinobu, J.; Yamada-Takamura, Y.

In: Journal of chemical physics, Vol. 140, No. 18, 12.05.2014, p. 1-6.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene

AU - Friedlein, R.

AU - Fleurence, A.

AU - Aoyagi, K.

AU - de Jong, Machiel Pieter

AU - Van Hao, B.

AU - Wiggers, Frank Bert

AU - Yoshimoto, S.

AU - Koitaya, T.

AU - Shimizu, S.

AU - Noritake, H.

AU - Mukai, K.

AU - Yoshinobu, J.

AU - Yamada-Takamura, Y.

N1 - eemcs-eprint-24742

PY - 2014/5/12

Y1 - 2014/5/12

N2 - From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.

AB - From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.

KW - EWI-24742

KW - epitaxial layersEXAFSphotoelectron spectrarelaxationscanning tunneling microscopysiliconXANES

KW - XANES

KW - Silicon

KW - EXAFS

KW - IR-91075

KW - photoelectron spectra

KW - relaxation

KW - Scanning tunneling microscopy

KW - METIS-304100

KW - epitaxial layers

U2 - 10.1063/1.4875075

DO - 10.1063/1.4875075

M3 - Article

VL - 140

SP - 1

EP - 6

JO - Journal of chemical physics

JF - Journal of chemical physics

SN - 0021-9606

IS - 18

ER -