Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene

R. Friedlein, A. Fleurence, K. Aoyagi, Machiel Pieter de Jong, B. Van Hao, Frank Bert Wiggers, S. Yoshimoto, T. Koitaya, S. Shimizu, H. Noritake, K. Mukai, J. Yoshinobu, Y. Yamada-Takamura

    Research output: Contribution to journalArticleAcademicpeer-review

    17 Citations (Scopus)

    Abstract

    From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.
    Original languageUndefined
    Pages (from-to)1-6
    Number of pages6
    JournalJournal of chemical physics
    Volume140
    Issue number18
    DOIs
    Publication statusPublished - 12 May 2014

    Keywords

    • EWI-24742
    • epitaxial layersEXAFSphotoelectron spectrarelaxationscanning tunneling microscopysiliconXANES
    • XANES
    • Silicon
    • EXAFS
    • IR-91075
    • photoelectron spectra
    • relaxation
    • Scanning tunneling microscopy
    • METIS-304100
    • epitaxial layers

    Cite this

    Friedlein, R., Fleurence, A., Aoyagi, K., de Jong, M. P., Van Hao, B., Wiggers, F. B., ... Yamada-Takamura, Y. (2014). Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene. Journal of chemical physics, 140(18), 1-6. https://doi.org/10.1063/1.4875075
    Friedlein, R. ; Fleurence, A. ; Aoyagi, K. ; de Jong, Machiel Pieter ; Van Hao, B. ; Wiggers, Frank Bert ; Yoshimoto, S. ; Koitaya, T. ; Shimizu, S. ; Noritake, H. ; Mukai, K. ; Yoshinobu, J. ; Yamada-Takamura, Y. / Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene. In: Journal of chemical physics. 2014 ; Vol. 140, No. 18. pp. 1-6.
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    title = "Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene",
    abstract = "From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.",
    keywords = "EWI-24742, epitaxial layersEXAFSphotoelectron spectrarelaxationscanning tunneling microscopysiliconXANES, XANES, Silicon, EXAFS, IR-91075, photoelectron spectra, relaxation, Scanning tunneling microscopy, METIS-304100, epitaxial layers",
    author = "R. Friedlein and A. Fleurence and K. Aoyagi and {de Jong}, {Machiel Pieter} and {Van Hao}, B. and Wiggers, {Frank Bert} and S. Yoshimoto and T. Koitaya and S. Shimizu and H. Noritake and K. Mukai and J. Yoshinobu and Y. Yamada-Takamura",
    note = "eemcs-eprint-24742",
    year = "2014",
    month = "5",
    day = "12",
    doi = "10.1063/1.4875075",
    language = "Undefined",
    volume = "140",
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    journal = "Journal of chemical physics",
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    Friedlein, R, Fleurence, A, Aoyagi, K, de Jong, MP, Van Hao, B, Wiggers, FB, Yoshimoto, S, Koitaya, T, Shimizu, S, Noritake, H, Mukai, K, Yoshinobu, J & Yamada-Takamura, Y 2014, 'Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene', Journal of chemical physics, vol. 140, no. 18, pp. 1-6. https://doi.org/10.1063/1.4875075

    Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene. / Friedlein, R.; Fleurence, A.; Aoyagi, K.; de Jong, Machiel Pieter; Van Hao, B.; Wiggers, Frank Bert; Yoshimoto, S.; Koitaya, T.; Shimizu, S.; Noritake, H.; Mukai, K.; Yoshinobu, J.; Yamada-Takamura, Y.

    In: Journal of chemical physics, Vol. 140, No. 18, 12.05.2014, p. 1-6.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene

    AU - Friedlein, R.

    AU - Fleurence, A.

    AU - Aoyagi, K.

    AU - de Jong, Machiel Pieter

    AU - Van Hao, B.

    AU - Wiggers, Frank Bert

    AU - Yoshimoto, S.

    AU - Koitaya, T.

    AU - Shimizu, S.

    AU - Noritake, H.

    AU - Mukai, K.

    AU - Yoshinobu, J.

    AU - Yamada-Takamura, Y.

    N1 - eemcs-eprint-24742

    PY - 2014/5/12

    Y1 - 2014/5/12

    N2 - From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.

    AB - From the analysis of high-resolution Si 2p photoelectron and near-edge x-ray absorption fine structure (NEXAFS) spectra, we show that core level excitations of epitaxial silicene on ZrB2(0001) thin films are characteristically different from those of sp 3-hybridized silicon. In particular, it is revealed that the lower Si 2p binding energies and the low onset in the NEXAFS spectra as well as the occurrence of satellite features in the core level spectra are attributed to the screening by low-energy valence electrons and interband transitions between π bands, respectively. The analysis of observed Si 2p intensities related to chemically distinct Si atoms indicates the presence of at least one previously unidentified component. The presence of this component suggests that the observation of stress-related stripe domains in scanning tunnelling microscopy images is intrinsically linked to the relaxation of Si atoms away from energetically unfavourable positions.

    KW - EWI-24742

    KW - epitaxial layersEXAFSphotoelectron spectrarelaxationscanning tunneling microscopysiliconXANES

    KW - XANES

    KW - Silicon

    KW - EXAFS

    KW - IR-91075

    KW - photoelectron spectra

    KW - relaxation

    KW - Scanning tunneling microscopy

    KW - METIS-304100

    KW - epitaxial layers

    U2 - 10.1063/1.4875075

    DO - 10.1063/1.4875075

    M3 - Article

    VL - 140

    SP - 1

    EP - 6

    JO - Journal of chemical physics

    JF - Journal of chemical physics

    SN - 0021-9606

    IS - 18

    ER -