Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)

Sreetosh Goswami; Adam J. Matula; Santi P. Rath; Svante Hedstrom; Surajit Saha; Meenakshi Annamalai; Debabrata Sengupta; Abhijeet Patra; Siddhartha Ghosh; Hariom Jani; Soumya Sarkar; Mallikarjuna Rao Motapothula; Christian A. Nijhuis; Jens Martin; Sreebrata Goswami; Victor S. Batista; T. Venkatesan

doi:10.1038/nmat5059

Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)

Sreetosh Goswami, Adam J. Matula, Santi P. Rath, Svante Hedstrom, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, Abhijeet Patra, Siddhartha Ghosh, Hariom Jani, Soumya Sarkar, Mallikarjuna Rao Motapothula, Christian A. Nijhuis, Jens Martin, Sreebrata Goswami^*, Victor S. Batista^*, T. Venkatesan

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

In the version of this Article originally published, the x-axis units of Fig. 3a were incorrectly given as ms, and should have read μs. This has now been corrected. Two places in the text also needed amending to reflect this change: the penultimate sentence of Fig. 3c,d caption now starts 'Microsecond pulses are used', and the penultimate sentence of the second paragraph of 'Device performance' has been changed to begin 'Device A was measured continuously over 230 days with microsecond write–read pulses'. All have now been corrected in the online versions of the Article.

Original language	English
Pages (from-to)	103-103
Journal	Nature materials
Volume	17
Issue number	1
DOIs	https://doi.org/10.1038/nmat5059
Publication status	Published - Jan 2018
Externally published	Yes

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1 Article

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
Goswami, S., Matula, A. J., Rath, S. P., Hedstrom, S., Saha, S., Annamalai, M., Sengupta, D., Patra, A., Ghosh, S., Jani, H., Sarkar, S., Motapothula, M. R., Nijhuis, C. A., Martin, J., Goswami, S., Batista, V. S. & Venkatesan, T., Dec 2017, In: Nature materials. 16, 12, p. 1216-1224
Research output: Contribution to journal › Article › Academic › peer-review
258 Citations (Scopus)

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Goswami, S., Matula, A. J., Rath, S. P., Hedstrom, S., Saha, S., Annamalai, M., Sengupta, D., Patra, A., Ghosh, S., Jani, H., Sarkar, S., Motapothula, M. R., Nijhuis, C. A., Martin, J., Goswami, S., Batista, V. S., & Venkatesan, T. (2018). Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017). Nature materials, 17(1), 103-103. https://doi.org/10.1038/nmat5059

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title = "Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)",

abstract = "In the version of this Article originally published, the x-axis units of Fig. 3a were incorrectly given as ms, and should have read μs. This has now been corrected. Two places in the text also needed amending to reflect this change: the penultimate sentence of Fig. 3c,d caption now starts 'Microsecond pulses are used', and the penultimate sentence of the second paragraph of 'Device performance' has been changed to begin 'Device A was measured continuously over 230 days with microsecond write–read pulses'. All have now been corrected in the online versions of the Article.",

author = "Sreetosh Goswami and Matula, {Adam J.} and Rath, {Santi P.} and Svante Hedstrom and Surajit Saha and Meenakshi Annamalai and Debabrata Sengupta and Abhijeet Patra and Siddhartha Ghosh and Hariom Jani and Soumya Sarkar and Motapothula, {Mallikarjuna Rao} and Nijhuis, {Christian A.} and Jens Martin and Sreebrata Goswami and Batista, {Victor S.} and T. Venkatesan",

year = "2018",

month = jan,

doi = "10.1038/nmat5059",

language = "English",

volume = "17",

pages = "103--103",

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Goswami, S, Matula, AJ, Rath, SP, Hedstrom, S, Saha, S, Annamalai, M, Sengupta, D, Patra, A, Ghosh, S, Jani, H, Sarkar, S, Motapothula, MR, Nijhuis, CA, Martin, J, Goswami, S, Batista, VS & Venkatesan, T 2018, 'Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)', Nature materials, vol. 17, no. 1, pp. 103-103. https://doi.org/10.1038/nmat5059

TY - JOUR

T1 - Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)

AU - Goswami, Sreetosh

AU - Matula, Adam J.

AU - Rath, Santi P.

AU - Hedstrom, Svante

AU - Saha, Surajit

AU - Annamalai, Meenakshi

AU - Sengupta, Debabrata

AU - Patra, Abhijeet

AU - Ghosh, Siddhartha

AU - Jani, Hariom

AU - Sarkar, Soumya

AU - Motapothula, Mallikarjuna Rao

AU - Nijhuis, Christian A.

AU - Martin, Jens

AU - Goswami, Sreebrata

AU - Batista, Victor S.

AU - Venkatesan, T.

PY - 2018/1

Y1 - 2018/1

N2 - In the version of this Article originally published, the x-axis units of Fig. 3a were incorrectly given as ms, and should have read μs. This has now been corrected. Two places in the text also needed amending to reflect this change: the penultimate sentence of Fig. 3c,d caption now starts 'Microsecond pulses are used', and the penultimate sentence of the second paragraph of 'Device performance' has been changed to begin 'Device A was measured continuously over 230 days with microsecond write–read pulses'. All have now been corrected in the online versions of the Article.

AB - In the version of this Article originally published, the x-axis units of Fig. 3a were incorrectly given as ms, and should have read μs. This has now been corrected. Two places in the text also needed amending to reflect this change: the penultimate sentence of Fig. 3c,d caption now starts 'Microsecond pulses are used', and the penultimate sentence of the second paragraph of 'Device performance' has been changed to begin 'Device A was measured continuously over 230 days with microsecond write–read pulses'. All have now been corrected in the online versions of the Article.

U2 - 10.1038/nmat5059

DO - 10.1038/nmat5059

M3 - Article

SN - 1476-1122

VL - 17

SP - 103

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JO - Nature materials

JF - Nature materials

IS - 1

ER -

Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)

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Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

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