Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)

Sreetosh Goswami, Adam J. Matula, Santi P. Rath, Svante Hedstrom, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, Abhijeet Patra, Siddhartha Ghosh, Hariom Jani, Soumya Sarkar, Mallikarjuna Rao Motapothula, Christian A. Nijhuis, Jens Martin, Sreebrata Goswami*, Victor S. Batista*, T. Venkatesan

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)


In the version of this Article originally published, the x-axis units of Fig. 3a were incorrectly given as ms, and should have read μs. This has now been corrected. Two places in the text also needed amending to reflect this change: the penultimate sentence of Fig. 3c,d caption now starts 'Microsecond pulses are used', and the penultimate sentence of the second paragraph of 'Device performance' has been changed to begin 'Device A was measured continuously over 230 days with microsecond write–read pulses'. All have now been corrected in the online versions of the Article.
Original languageEnglish
Pages (from-to)103-103
JournalNature materials
Issue number1
Publication statusPublished - Jan 2018
Externally publishedYes

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