Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)

Sreetosh Goswami, Adam J. Matula, Santi P. Rath, Svante Hedstrom, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, Abhijeet Patra, Siddhartha Ghosh, Hariom Jani, Soumya Sarkar, Mallikarjuna Rao Motapothula, Christian A. Nijhuis, Jens Martin, Sreebrata Goswami^*, Victor S. Batista^*, T. Venkatesan

^*Corresponding author for this work

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2017
Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
Goswami, S., Matula, A. J., Rath, S. P., Hedstrom, S., Saha, S., Annamalai, M., Sengupta, D., Patra, A., Ghosh, S., Jani, H., Sarkar, S., Motapothula, M. R., Nijhuis, C. A., Martin, J., Goswami, S., Batista, V. S. & Venkatesan, T., Dec 2017, In: Nature materials. 16, 12, p. 1216-1224
Research output: Contribution to journal › Article › Academic › peer-review
185 Citations (Scopus)

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Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics (vol 16, pg 1216, 2017)

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Robust resistive memory devices using solution-processable metal-coordinated azo aromatics