Correction to "High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing"

Serena Rollo, Dipti Rani, Renaud Leturcq, Wouter Olthuis, César Pascual García*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We made an error in the designation of the voltage offset used for the calculation of the shift of the surface potential. The method that we used with the Vref having a minimum in δIds/δVref calculates the threshold voltage and not flat band potential. As both offsets are equivalent to follow the changes in ψ0, so there is no significant change in the interpretation of the data. The labels and legend for Figure 2 in the original article should be corrected as shown here. (Figure presented).

Original languageEnglish
Pages (from-to)2934-2934
Number of pages1
JournalNano letters
Volume20
Issue number4
DOIs
Publication statusPublished - 8 Apr 2020

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