Correction to "High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing"

Serena Rollo; Dipti Rani; Renaud Leturcq; Wouter Olthuis; César Pascual García

doi:10.1021/acs.nanolett.0c01081

Correction to "High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing"

Serena Rollo, Dipti Rani, Renaud Leturcq, Wouter Olthuis, César Pascual García^*

^*Corresponding author for this work

Biomedical and Environmental Sensorsystems

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

We made an error in the designation of the voltage offset used for the calculation of the shift of the surface potential. The method that we used with the Vref having a minimum in δI_ds/δV_ref calculates the threshold voltage and not flat band potential. As both offsets are equivalent to follow the changes in ψ₀, so there is no significant change in the interpretation of the data. The labels and legend for Figure 2 in the original article should be corrected as shown here. (Figure presented).

Original language	English
Pages (from-to)	2934-2934
Number of pages	1
Journal	Nano letters
Volume	20
Issue number	4
DOIs	https://doi.org/10.1021/acs.nanolett.0c01081
Publication status	Published - 8 Apr 2020

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10.1021/acs.nanolett.0c01081

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abstract = "We made an error in the designation of the voltage offset used for the calculation of the shift of the surface potential. The method that we used with the Vref having a minimum in δIds/δVref calculates the threshold voltage and not flat band potential. As both offsets are equivalent to follow the changes in ψ0, so there is no significant change in the interpretation of the data. The labels and legend for Figure 2 in the original article should be corrected as shown here. (Figure presented).",

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AU - Rollo, Serena

AU - Rani, Dipti

AU - Leturcq, Renaud

AU - Olthuis, Wouter

AU - García, César Pascual

PY - 2020/4/8

Y1 - 2020/4/8

N2 - We made an error in the designation of the voltage offset used for the calculation of the shift of the surface potential. The method that we used with the Vref having a minimum in δIds/δVref calculates the threshold voltage and not flat band potential. As both offsets are equivalent to follow the changes in ψ0, so there is no significant change in the interpretation of the data. The labels and legend for Figure 2 in the original article should be corrected as shown here. (Figure presented).

AB - We made an error in the designation of the voltage offset used for the calculation of the shift of the surface potential. The method that we used with the Vref having a minimum in δIds/δVref calculates the threshold voltage and not flat band potential. As both offsets are equivalent to follow the changes in ψ0, so there is no significant change in the interpretation of the data. The labels and legend for Figure 2 in the original article should be corrected as shown here. (Figure presented).

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M3 - Article

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SN - 1530-6984

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Correction to "High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing"

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High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing

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