Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide

J.G.G. Ackaert, Zhichun Wang, E. Backer, Cora Salm

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of 7th International symposium of Plasma Process-Induced Damage
    Place of PublicationSanta Clara, California
    PublisherAmerican Vacuum Society
    Pages45-48
    Number of pages4
    ISBN (Print)--
    Publication statusPublished - 6 Jun 2002

    Keywords

    • METIS-206347

    Cite this

    Ackaert, J. G. G., Wang, Z., Backer, E., & Salm, C. (2002). Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide. In Proceedings of 7th International symposium of Plasma Process-Induced Damage (pp. 45-48). Santa Clara, California: American Vacuum Society.