Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Jan Ackaert, Zhichun Wang, Eddy de Backer, Cora Salm

    Research output: Contribution to conferencePaper

    8 Citations (Scopus)
    30 Downloads (Pure)

    Abstract

    In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.
    Original languageUndefined
    Pages45-48
    Number of pages4
    DOIs
    Publication statusPublished - 10 Dec 2002

    Keywords

    • leakage currents
    • plasma materials processing
    • EWI-15582
    • Hot carriers
    • MOSFET
    • Failure analysis
    • IR-67756

    Cite this

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    title = "Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide",
    abstract = "In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.",
    keywords = "leakage currents, plasma materials processing, EWI-15582, Hot carriers, MOSFET, Failure analysis, IR-67756",
    author = "Jan Ackaert and Zhichun Wang and {de Backer}, Eddy and Cora Salm",
    year = "2002",
    month = "12",
    day = "10",
    doi = "10.1109/PPID.2002.1042605",
    language = "Undefined",
    pages = "45--48",

    }

    Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide. / Ackaert, Jan; Wang, Zhichun; de Backer, Eddy; Salm, Cora.

    2002. 45-48.

    Research output: Contribution to conferencePaper

    TY - CONF

    T1 - Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

    AU - Ackaert, Jan

    AU - Wang, Zhichun

    AU - de Backer, Eddy

    AU - Salm, Cora

    PY - 2002/12/10

    Y1 - 2002/12/10

    N2 - In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.

    AB - In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.

    KW - leakage currents

    KW - plasma materials processing

    KW - EWI-15582

    KW - Hot carriers

    KW - MOSFET

    KW - Failure analysis

    KW - IR-67756

    U2 - 10.1109/PPID.2002.1042605

    DO - 10.1109/PPID.2002.1042605

    M3 - Paper

    SP - 45

    EP - 48

    ER -