Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Zhichun Wang, Jan Ackaert, Cora Salm, Eddy de Backer, Geert van den Bosch, Wade Zawalski

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    Abstract

    In this paper, we compare the hot carrier (HC) stress and oxide breakdown results with the fast and commonly used gate leakage current measurement. A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator but also a good indicator of the reliability of the devices. A new testing method was developed to reveal latent as well as actual plasma damage, for a wide range of gate oxide quality in a very fast way. The gate oxide was stressed to break down using a ramping voltage. Moreover, oxide time-to-breakdown (t/sub bd/) was measured with constant voltage stress. These two testing methods have been compared.
    Original languageEnglish
    Title of host publication9th International Symposium on Physics and Failure Analysis 2002
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages242-245
    Number of pages4
    ISBN (Print)0-7803-7416-9
    DOIs
    Publication statusPublished - 7 Nov 2002
    Event9th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2002 - Singapore, Singapore
    Duration: 8 Jul 200212 Jul 2002
    Conference number: 9

    Conference

    Conference9th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2002
    Abbreviated titleIPFA
    CountrySingapore
    CitySingapore
    Period8/07/0212/07/02

    Keywords

    • IR-43317
    • METIS-206341
    • EWI-15601

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  • Cite this

    Wang, Z., Ackaert, J., Salm, C., de Backer, E., van den Bosch, G., & Zawalski, W. (2002). Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide. In 9th International Symposium on Physics and Failure Analysis 2002 (pp. 242-245). Piscataway, NJ: IEEE. https://doi.org/10.1109/IPFA.2002.1025671