Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Jan Ackaert; Zhichun Wang; Eddy De Backer; Cora Salm

doi:10.1109/PPID.2002.1042605

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Jan Ackaert
, Zhichun Wang
, Eddy De Backer
, Cora Salm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

12 Citations (Scopus)

163 Downloads (Pure)

Abstract

In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.

Original language	English
Title of host publication	Proceedings of 7th International symposium of Plasma Process-Induced Damage
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	45-48
Number of pages	4
ISBN (Print)	0-9651577-7-6
DOIs	https://doi.org/10.1109/PPID.2002.1042605
Publication status	Published - 10 Dec 2002
Event	7th International Symposium of Plasma Process-Induced Damage - Maui, United States Duration: 6 Jun 2002 → 7 Jun 2002

Conference

Conference	7th International Symposium of Plasma Process-Induced Damage
Country/Territory	United States
City	Maui
Period	6/06/02 → 7/06/02

Keywords

n/a OA procedure
Plasma materials processing
Hot carriers
MOSFET
Failure analysis
Leakage currents

Access to Document

10.1109/PPID.2002.1042605

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide
Wang, Z., Ackaert, J., Salm, C., De Backer, E., van den Bosch, G. & Zawalski, W., 7 Nov 2002, Proceedings of the 9th International Symposium on Physics and Failure Analysis 2002. Piscataway, NJ: IEEE, p. 242-245 4 p.
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
86 Downloads (Pure)

Cite this

@inproceedings{a3e53342a33e484b8280de60df7dd130,

title = "Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide",

abstract = "In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.",

keywords = "n/a OA procedure, Plasma materials processing, Hot carriers, MOSFET, Failure analysis, Leakage currents",

author = "Jan Ackaert and Zhichun Wang and \{De Backer\}, Eddy and Cora Salm",

year = "2002",

month = dec,

day = "10",

doi = "10.1109/PPID.2002.1042605",

language = "English",

isbn = "0-9651577-7-6",

pages = "45--48",

booktitle = "Proceedings of 7th International symposium of Plasma Process-Induced Damage",

publisher = "IEEE",

address = "United States",

note = "7th International Symposium of Plasma Process-Induced Damage ; Conference date: 06-06-2002 Through 07-06-2002",

}

Ackaert, J, Wang, Z, De Backer, E & Salm, C 2002, Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide. in Proceedings of 7th International symposium of Plasma Process-Induced Damage. IEEE, Piscataway, NJ, pp. 45-48, 7th International Symposium of Plasma Process-Induced Damage, Maui, Hawaii, United States, 6/06/02. https://doi.org/10.1109/PPID.2002.1042605

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide. / Ackaert, Jan; Wang, Zhichun; De Backer, Eddy et al.
Proceedings of 7th International symposium of Plasma Process-Induced Damage. Piscataway, NJ: IEEE, 2002. p. 45-48.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

AU - Ackaert, Jan

AU - Wang, Zhichun

AU - De Backer, Eddy

AU - Salm, Cora

PY - 2002/12/10

Y1 - 2002/12/10

N2 - In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.

AB - In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator in the region about 1 nA but also a good indicator of the reliability of the devices in the region between 1 pA and 1 nA. Thus, from the value of gate leakage current one can estimate the reliability of the devices, saving precious measurement time.

KW - n/a OA procedure

KW - Plasma materials processing

KW - Hot carriers

KW - MOSFET

KW - Failure analysis

KW - Leakage currents

U2 - 10.1109/PPID.2002.1042605

DO - 10.1109/PPID.2002.1042605

M3 - Conference contribution

SN - 0-9651577-7-6

SP - 45

EP - 48

BT - Proceedings of 7th International symposium of Plasma Process-Induced Damage

PB - IEEE

CY - Piscataway, NJ

T2 - 7th International Symposium of Plasma Process-Induced Damage

Y2 - 6 June 2002 through 7 June 2002

ER -

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Abstract

Conference

Keywords

Access to Document

Fingerprint

Research output

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Cite this