Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators

E.J. Faber; L.P.M. de Smet; W. Olthuis; H. Zuilhof; E.J.R. Sudhölter; P. Bergveld; A. van den Berg

Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators

E.J. Faber, L.P.M. de Smet, W. Olthuis, H. Zuilhof, E.J.R. Sudhölter, P. Bergveld, A. van den Berg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The influence of silicon surface modification via Si-C18H37 devices on n-type silicon is studied by forming MIS (metal-insulator-silicon) diodes via a mercury-probe. Both the influence of the monolayer molecule (1-octadecene/1-octadecyne) and substrate orientation (<100>/<111>) are investigated. Viamultiple J-V and C-V measurements relevant parameters are derived to obtain information on both reproducibility and monolayer and silicon-monolayer interface properties. It was found that 1-alkynes, which are able to make 2 Si-C bonds, have superior insulating properties as compared to 1-alkenes, which are able to make only a single Si-C bond. There was no noticeable influence of substrate orientation, which indicated the broad usability of such monolayers. The ease of fabrication together with the outstanding electrical properties show the potential of these monolayers in creating hybrid molecularsilicon devices.

Original language	English
Title of host publication	Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Subtitle of host publication	November 17-18, 2005, Veldhoven, the Netherlands
Place of Publication	Veldhoven
Publisher	Utrecht Technology Foundation
Pages	6-10
Number of pages	5
ISBN (Print)	90-73461-50-2
Publication status	Published - 17 Nov 2006
Event	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 8

Workshop

Workshop	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	17/11/05 → 18/11/05

Keywords

Silicon
Mercury probes
Organic monolayers
Insulator

Cite this

Faber, E. J., de Smet, L. P. M., Olthuis, W., Zuilhof, H., Sudhölter, E. J. R., Bergveld, P., & van den Berg, A. (2006). Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators. In Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors: November 17-18, 2005, Veldhoven, the Netherlands (pp. 6-10). Utrecht Technology Foundation.

Faber, E.J. ; de Smet, L.P.M. ; Olthuis, W. et al. / Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators. Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors: November 17-18, 2005, Veldhoven, the Netherlands. Veldhoven : Utrecht Technology Foundation, 2006. pp. 6-10

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title = "Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators",

abstract = "The influence of silicon surface modification via Si-C18H37 devices on n-type silicon is studied by forming MIS (metal-insulator-silicon) diodes via a mercury-probe. Both the influence of the monolayer molecule (1-octadecene/1-octadecyne) and substrate orientation (<100>/<111>) are investigated. Viamultiple J-V and C-V measurements relevant parameters are derived to obtain information on both reproducibility and monolayer and silicon-monolayer interface properties. It was found that 1-alkynes, which are able to make 2 Si-C bonds, have superior insulating properties as compared to 1-alkenes, which are able to make only a single Si-C bond. There was no noticeable influence of substrate orientation, which indicated the broad usability of such monolayers. The ease of fabrication together with the outstanding electrical properties show the potential of these monolayers in creating hybrid molecularsilicon devices.",

keywords = "Silicon, Mercury probes, Organic monolayers, Insulator",

author = "E.J. Faber and {de Smet}, L.P.M. and W. Olthuis and H. Zuilhof and E.J.R. Sudh{\"o}lter and P. Bergveld and {van den Berg}, A.",

year = "2006",

month = nov,

day = "17",

language = "English",

isbn = "90-73461-50-2",

pages = "6--10",

booktitle = "Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

publisher = "Utrecht Technology Foundation",

note = "8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, SAFE ; Conference date: 17-11-2005 Through 18-11-2005",

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Faber, EJ, de Smet, LPM, Olthuis, W, Zuilhof, H, Sudhölter, EJR, Bergveld, P & van den Berg, A 2006, Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators. in Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors: November 17-18, 2005, Veldhoven, the Netherlands. Utrecht Technology Foundation, Veldhoven, pp. 6-10, 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands, 17/11/05.

Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators. / Faber, E.J.; de Smet, L.P.M.; Olthuis, W. et al.
Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors: November 17-18, 2005, Veldhoven, the Netherlands. Veldhoven: Utrecht Technology Foundation, 2006. p. 6-10.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators

AU - Faber, E.J.

AU - de Smet, L.P.M.

AU - Olthuis, W.

AU - Zuilhof, H.

AU - Sudhölter, E.J.R.

AU - Bergveld, P.

AU - van den Berg, A.

N1 - Conference code: 8

PY - 2006/11/17

Y1 - 2006/11/17

N2 - The influence of silicon surface modification via Si-C18H37 devices on n-type silicon is studied by forming MIS (metal-insulator-silicon) diodes via a mercury-probe. Both the influence of the monolayer molecule (1-octadecene/1-octadecyne) and substrate orientation (<100>/<111>) are investigated. Viamultiple J-V and C-V measurements relevant parameters are derived to obtain information on both reproducibility and monolayer and silicon-monolayer interface properties. It was found that 1-alkynes, which are able to make 2 Si-C bonds, have superior insulating properties as compared to 1-alkenes, which are able to make only a single Si-C bond. There was no noticeable influence of substrate orientation, which indicated the broad usability of such monolayers. The ease of fabrication together with the outstanding electrical properties show the potential of these monolayers in creating hybrid molecularsilicon devices.

AB - The influence of silicon surface modification via Si-C18H37 devices on n-type silicon is studied by forming MIS (metal-insulator-silicon) diodes via a mercury-probe. Both the influence of the monolayer molecule (1-octadecene/1-octadecyne) and substrate orientation (<100>/<111>) are investigated. Viamultiple J-V and C-V measurements relevant parameters are derived to obtain information on both reproducibility and monolayer and silicon-monolayer interface properties. It was found that 1-alkynes, which are able to make 2 Si-C bonds, have superior insulating properties as compared to 1-alkenes, which are able to make only a single Si-C bond. There was no noticeable influence of substrate orientation, which indicated the broad usability of such monolayers. The ease of fabrication together with the outstanding electrical properties show the potential of these monolayers in creating hybrid molecularsilicon devices.

KW - Silicon

KW - Mercury probes

KW - Organic monolayers

KW - Insulator

M3 - Conference contribution

SN - 90-73461-50-2

SP - 6

EP - 10

BT - Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

PB - Utrecht Technology Foundation

CY - Veldhoven

T2 - 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005

Y2 - 17 November 2005 through 18 November 2005

ER -

Faber EJ, de Smet LPM, Olthuis W, Zuilhof H, Sudhölter EJR, Bergveld P et al. Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators. In Annual Workshop on Circuits, Systems and Signal Processing [and] Annual Workshop on Semiconductor Advances for Future Electronics and Sensors: November 17-18, 2005, Veldhoven, the Netherlands. Veldhoven: Utrecht Technology Foundation. 2006. p. 6-10

Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators

Abstract

Workshop

Keywords

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Cite this