Abstract
In this paper we present preliminary current-voltage characteristics of different ZnS/p-Si hetero-junction solar cells, under 1 sun illumination. The devices with Cr-doped ZnS show an increase in the short circuit current, and only a slight decrease in the open circuit voltage compared to the devices with undoped ZnS. The ZnS films were prepared using pulsed laser deposition on p-doped Si (100) substrates, and are highly (111) oriented. For the Cr-doped films absorption of sub-bandgap photons is observed in the UV-VIS wavelength range. The findings support the identification of Cr-doped ZnS as a promising intermediate band solar cell material.
Original language | English |
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Publisher | IEEE |
ISBN (Electronic) | 978-1-4799-3299-3 |
ISBN (Print) | 0160-8371 |
DOIs | |
Publication status | Published - 2013 |
Externally published | Yes |
Keywords
- absorption
- chromium
- Electrodes
- Films
- Fingers
- hetero-junction solar cells
- intermediate band solar cells
- open circuit voltage
- p-doped silicon(100) substrates
- Photovoltaic cells
- pulsed laser deposition
- short circuit current
- Silicon
- solar cells
- subbandgap photons absorption
- Substrates
- thin films
- UV-VIS wavelength range
- zinc compounds
- ZnS:Cr