Cr-doped ZnS for intermediate band solar cells: Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Xiaodong Yang, M. Nematollahi (Editor), U. N. Gibson (Editor), T. W. Reenaas

Research output: Book/ReportBook editingAcademic

8 Citations (Scopus)

Abstract

In this paper we present preliminary current-voltage characteristics of different ZnS/p-Si hetero-junction solar cells, under 1 sun illumination. The devices with Cr-doped ZnS show an increase in the short circuit current, and only a slight decrease in the open circuit voltage compared to the devices with undoped ZnS. The ZnS films were prepared using pulsed laser deposition on p-doped Si (100) substrates, and are highly (111) oriented. For the Cr-doped films absorption of sub-bandgap photons is observed in the UV-VIS wavelength range. The findings support the identification of Cr-doped ZnS as a promising intermediate band solar cell material.
Original languageEnglish
PublisherIEEE
ISBN (Electronic)978-1-4799-3299-3
ISBN (Print)0160-8371
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • absorption
  • chromium
  • Electrodes
  • Films
  • Fingers
  • hetero-junction solar cells
  • intermediate band solar cells
  • open circuit voltage
  • p-doped silicon(100) substrates
  • Photovoltaic cells
  • pulsed laser deposition
  • short circuit current
  • Silicon
  • solar cells
  • subbandgap photons absorption
  • Substrates
  • thin films
  • UV-VIS wavelength range
  • zinc compounds
  • ZnS:Cr

Fingerprint Dive into the research topics of 'Cr-doped ZnS for intermediate band solar cells: Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th'. Together they form a unique fingerprint.

Cite this