Crack barriers for thick SiN using dicing

Ruben Grootes; M.  Dijkstra; Yvan Klaver; David Marpaung; H.L.  Offerhaus

doi:10.1364/OE.456834

Crack barriers for thick SiN using dicing

Ruben Grootes, M. Dijkstra, Yvan Klaver, David Marpaung, H.L. Offerhaus^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss

Original language	English
Pages (from-to)	16725-16733
Journal	Optics express
Volume	30
Issue number	10
DOIs	https://doi.org/10.1364/OE.456834
Publication status	Published - 9 May 2022

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title = "Crack barriers for thick SiN using dicing",

abstract = "Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss",

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AU - Grootes, Ruben

AU - Dijkstra, M.

AU - Klaver, Yvan

AU - Marpaung, David

AU - Offerhaus, H.L.

PY - 2022/5/9

Y1 - 2022/5/9

N2 - Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss

AB - Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss

U2 - 10.1364/OE.456834

DO - 10.1364/OE.456834

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JO - Optics express

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Crack barriers for thick SiN using dicing

Abstract

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