Crack barriers for thick SiN using dicing

Ruben Grootes, M. Dijkstra, Yvan Klaver, David Marpaung, H.L. Offerhaus*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
6 Downloads (Pure)


Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss
Original languageEnglish
Pages (from-to)16725-16733
JournalOptics express
Issue number10
Publication statusPublished - 9 May 2022


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