Crack barriers for thick SiN using dicing

R.M. Grootes; M.  Dijkstra; Y. Klaver; D. Marpaung; H.L.  Offerhaus

doi:10.1364/OE.456834

Crack barriers for thick SiN using dicing

R.M. Grootes
, M. Dijkstra
, Y. Klaver
, D. Marpaung
, H.L. Offerhaus^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

11 Citations (Scopus)

272 Downloads (Pure)

Abstract

Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss

Original language	English
Pages (from-to)	16725-16733
Journal	Optics express
Volume	30
Issue number	10
DOIs	https://doi.org/10.1364/OE.456834
Publication status	Published - 9 May 2022

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10.1364/OE.456834Licence: CC BY

ArticleFinal published version, 5.31 MBLicence: CC BY

Data underlying the article: Crack barriers for thick SiN using dicing in Optics Express
Offerhaus, H. (Creator), Grootes, R. (Contributor), Dijkstra, M. (Contributor), Klaver, Y. (Contributor) & Marpaung, D. (Contributor), 4TU.Centre for Research Data, 14 Apr 2022
DOI: 10.4121/19572238.v1, https://data.4tu.nl/articles/dataset/Data_underlying_the_article_Crack_barriers_for_thick_SiN_using_dicing_in_Optics_Express/19572238/1 and 2 more links, https://data.4tu.nl/articles/_/19572238, https://data.4tu.nl/articles/_/19572238/1 (show fewer)
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Crack barriers for thick SiN using dicing

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Data underlying the article: Crack barriers for thick SiN using dicing in Optics Express

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