Critical thickness of Si0.7Ge0.3 layers in the fabrication of hf SiGe HBT's

J. L. Shi*, L. K. Nanver, K. Grimm, C. C.G. Visser

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

The critical thickness of Si0.-Ge0.3 films grown at 700 °C by APCVD has been evaluated using photoluminescence spectroscopy and Nomarski microscopy after Schimmel etching. Correlations are also made to hf SiGe HBT device characteristics. The critical thickness is located around 300 angstroms, but the precise determination of a critical thickness is complicated by formation of dislocations at the wafer edge at much lower thicknesses. The growth of Si cap layers up to 1800 angstroms thick, affects the further development and severity of the resulting defects, but does not initiate their formation.

Original languageEnglish
Title of host publication1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings
Pages788-791
Number of pages4
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes
Event1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 21 Oct 199823 Oct 1998
Conference number: 5

Conference

Conference1998 5th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityBeijing
Period21/10/9823/10/98

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