Critical thickness of Si0.7Ge0.3 layers in the fabrication of hf SiGe HBT's

J. L. Shi; L. K. Nanver; K. Grimm; C. C.G. Visser

doi:10.1109/ICSICT.1998.786145

Critical thickness of Si_0.7Ge_0.3 layers in the fabrication of hf SiGe HBT's

J. L. Shi^*, L. K. Nanver, K. Grimm, C. C.G. Visser

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

The critical thickness of Si_0.-Ge_0.3 films grown at 700 °C by APCVD has been evaluated using photoluminescence spectroscopy and Nomarski microscopy after Schimmel etching. Correlations are also made to hf SiGe HBT device characteristics. The critical thickness is located around 300 angstroms, but the precise determination of a critical thickness is complicated by formation of dislocations at the wafer edge at much lower thicknesses. The growth of Si cap layers up to 1800 angstroms thick, affects the further development and severity of the resulting defects, but does not initiate their formation.

Original language	English
Title of host publication	1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings
Pages	788-791
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.1998.786145
Publication status	Published - 1 Dec 1998
Externally published	Yes
Event	1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998 Conference number: 5

Conference

Conference	1998 5th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Beijing
Period	21/10/98 → 23/10/98

Access to Document

10.1109/ICSICT.1998.786145

Cite this

@inproceedings{03b7652512904df49c4d3d5e568dde43,

title = "Critical thickness of Si0.7Ge0.3 layers in the fabrication of hf SiGe HBT's",

abstract = "The critical thickness of Si0.-Ge0.3 films grown at 700 °C by APCVD has been evaluated using photoluminescence spectroscopy and Nomarski microscopy after Schimmel etching. Correlations are also made to hf SiGe HBT device characteristics. The critical thickness is located around 300 angstroms, but the precise determination of a critical thickness is complicated by formation of dislocations at the wafer edge at much lower thicknesses. The growth of Si cap layers up to 1800 angstroms thick, affects the further development and severity of the resulting defects, but does not initiate their formation.",

author = "Shi, {J. L.} and Nanver, {L. K.} and K. Grimm and Visser, {C. C.G.}",

year = "1998",

month = dec,

day = "1",

doi = "10.1109/ICSICT.1998.786145",

language = "English",

isbn = "0-7803-4306-9",

pages = "788--791",

booktitle = "1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings",

note = "1998 5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

}

Shi, JL, Nanver, LK, Grimm, K & Visser, CCG 1998, Critical thickness of Si_0.7Ge_0.3 layers in the fabrication of hf SiGe HBT's. in 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings. pp. 788-791, 1998 5th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, 21/10/98. https://doi.org/10.1109/ICSICT.1998.786145

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T1 - Critical thickness of Si0.7Ge0.3 layers in the fabrication of hf SiGe HBT's

AU - Shi, J. L.

AU - Nanver, L. K.

AU - Grimm, K.

AU - Visser, C. C.G.

N1 - Conference code: 5

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The critical thickness of Si0.-Ge0.3 films grown at 700 °C by APCVD has been evaluated using photoluminescence spectroscopy and Nomarski microscopy after Schimmel etching. Correlations are also made to hf SiGe HBT device characteristics. The critical thickness is located around 300 angstroms, but the precise determination of a critical thickness is complicated by formation of dislocations at the wafer edge at much lower thicknesses. The growth of Si cap layers up to 1800 angstroms thick, affects the further development and severity of the resulting defects, but does not initiate their formation.

AB - The critical thickness of Si0.-Ge0.3 films grown at 700 °C by APCVD has been evaluated using photoluminescence spectroscopy and Nomarski microscopy after Schimmel etching. Correlations are also made to hf SiGe HBT device characteristics. The critical thickness is located around 300 angstroms, but the precise determination of a critical thickness is complicated by formation of dislocations at the wafer edge at much lower thicknesses. The growth of Si cap layers up to 1800 angstroms thick, affects the further development and severity of the resulting defects, but does not initiate their formation.

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U2 - 10.1109/ICSICT.1998.786145

DO - 10.1109/ICSICT.1998.786145

M3 - Conference contribution

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EP - 791

BT - 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings

T2 - 1998 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998