Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

N. Stavitski; J.H. Klootwijk; H.W. van Zeijl; B.K. Boksteen; B.K. Boksteen; Alexeij Y. Kovalgin; Robertus A.M. Wolters

Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

N. Stavitski, J.H. Klootwijk, H.W. van Zeijl, B.K. Boksteen, B.K. Boksteen, Alexeij Y. Kovalgin, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon

Original language	Undefined
Title of host publication	10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	551-554
Number of pages	4
ISBN (Print)	978-90-73461-49-9
Publication status	Published - 29 Nov 2007
Event	10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands Duration: 29 Nov 2007 → 30 Nov 2007

Publication series

Name
Publisher	Technology Foundation STW
Number	7

Workshop

Workshop	10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
Country/Territory	Netherlands
City	Veldhoven
Period	29/11/07 → 30/11/07

Keywords

EWI-11742
METIS-245949
IR-64583
SC-ICF: Integrated Circuit Fabrication

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Cite this

@inproceedings{daf7fad682a5499f8a2c78eff0c283a9,

title = "Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances",

abstract = "A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon",

keywords = "EWI-11742, METIS-245949, IR-64583, SC-ICF: Integrated Circuit Fabrication",

author = "N. Stavitski and J.H. Klootwijk and {van Zeijl}, H.W. and B.K. Boksteen and B.K. Boksteen and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",

note = "http://eprints.ewi.utwente.nl/11742 ; 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 ; Conference date: 29-11-2007 Through 30-11-2007",

year = "2007",

month = nov,

day = "29",

language = "Undefined",

isbn = "978-90-73461-49-9",

publisher = "STW",

number = "7",

pages = "551--554",

booktitle = "10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)",

}

Stavitski, N, Klootwijk, JH, van Zeijl, HW, Boksteen, BK, Boksteen, BK, Kovalgin, AY & Wolters, RAM 2007, Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. in 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). STW, Utrecht, The Netherlands, pp. 551-554, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007, Veldhoven, Netherlands, 29/11/07.

Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. / Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W. et al.
10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands: STW, 2007. p. 551-554.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

AU - Stavitski, N.

AU - Klootwijk, J.H.

AU - van Zeijl, H.W.

AU - Boksteen, B.K.

AU - Kovalgin, Alexeij Y.

AU - Wolters, Robertus A.M.

N1 - http://eprints.ewi.utwente.nl/11742

PY - 2007/11/29

Y1 - 2007/11/29

N2 - A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon

AB - A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon

KW - EWI-11742

KW - METIS-245949

KW - IR-64583

KW - SC-ICF: Integrated Circuit Fabrication

M3 - Conference contribution

SN - 978-90-73461-49-9

SP - 551

EP - 554

BT - 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)

PB - STW

CY - Utrecht, The Netherlands

T2 - 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007

Y2 - 29 November 2007 through 30 November 2007

ER -