Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

N. Stavitski, J.H. Klootwijk, H.W. van Zeijl, B.K. Boksteen, B.K. Boksteen, Alexeij Y. Kovalgin, Robertus A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon
    Original languageUndefined
    Title of host publication10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages551-554
    Number of pages4
    ISBN (Print)978-90-73461-49-9
    Publication statusPublished - 29 Nov 2007
    Event10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands
    Duration: 29 Nov 200730 Nov 2007

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number7

    Workshop

    Workshop10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
    CountryNetherlands
    CityVeldhoven
    Period29/11/0730/11/07

    Keywords

    • EWI-11742
    • METIS-245949
    • IR-64583
    • SC-ICF: Integrated Circuit Fabrication

    Cite this

    Stavitski, N., Klootwijk, J. H., van Zeijl, H. W., Boksteen, B. K., Boksteen, B. K., Kovalgin, A. Y., & Wolters, R. A. M. (2007). Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. In 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE) (pp. 551-554). Utrecht, The Netherlands: STW.
    Stavitski, N. ; Klootwijk, J.H. ; van Zeijl, H.W. ; Boksteen, B.K. ; Boksteen, B.K. ; Kovalgin, Alexeij Y. ; Wolters, Robertus A.M. / Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands : STW, 2007. pp. 551-554
    @inproceedings{daf7fad682a5499f8a2c78eff0c283a9,
    title = "Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances",
    abstract = "A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon",
    keywords = "EWI-11742, METIS-245949, IR-64583, SC-ICF: Integrated Circuit Fabrication",
    author = "N. Stavitski and J.H. Klootwijk and {van Zeijl}, H.W. and B.K. Boksteen and B.K. Boksteen and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",
    note = "http://eprints.ewi.utwente.nl/11742",
    year = "2007",
    month = "11",
    day = "29",
    language = "Undefined",
    isbn = "978-90-73461-49-9",
    publisher = "STW",
    number = "7",
    pages = "551--554",
    booktitle = "10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)",

    }

    Stavitski, N, Klootwijk, JH, van Zeijl, HW, Boksteen, BK, Boksteen, BK, Kovalgin, AY & Wolters, RAM 2007, Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. in 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). STW, Utrecht, The Netherlands, pp. 551-554, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007, Veldhoven, Netherlands, 29/11/07.

    Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. / Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Boksteen, B.K.; Boksteen, B.K.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands : STW, 2007. p. 551-554.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

    AU - Stavitski, N.

    AU - Klootwijk, J.H.

    AU - van Zeijl, H.W.

    AU - Boksteen, B.K.

    AU - Boksteen, B.K.

    AU - Kovalgin, Alexeij Y.

    AU - Wolters, Robertus A.M.

    N1 - http://eprints.ewi.utwente.nl/11742

    PY - 2007/11/29

    Y1 - 2007/11/29

    N2 - A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon

    AB - A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used. Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon

    KW - EWI-11742

    KW - METIS-245949

    KW - IR-64583

    KW - SC-ICF: Integrated Circuit Fabrication

    M3 - Conference contribution

    SN - 978-90-73461-49-9

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    EP - 554

    BT - 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)

    PB - STW

    CY - Utrecht, The Netherlands

    ER -

    Stavitski N, Klootwijk JH, van Zeijl HW, Boksteen BK, Boksteen BK, Kovalgin AY et al. Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances. In 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands: STW. 2007. p. 551-554