A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and the minimum of the �?c to be measured using CBKR structures was estimated. We fabricated a set of CBKR structures with different geometries to confirm this limit experimentally. These structures were manufactured for metal-to-metal contacts. It was found that the extracted CBKR values were determined by dimensions of the two-metal stack in the contact area and sheet resistances of the metals used.
Index Terms—Contact resistance, cross-bridge Kelvin resistor (CBKR), sheet resistance, test structures, metal, silicon
|Publisher||Technology Foundation STW|
|Workshop||10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007|
|Period||29/11/07 → 30/11/07|
- SC-ICF: Integrated Circuit Fabrication