Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

N. Stavitski, M.J.H. van Dal, J.H. Klootwijk, Robertus A.M. Wolters, Alexeij Y. Kovalgin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    Abstract

    Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.
    Original languageUndefined
    Title of host publicationProceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages436-438
    Number of pages3
    ISBN (Print)978-90-73461-44-4
    Publication statusPublished - 23 Nov 2006

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number10

    Keywords

    • EWI-8415
    • METIS-237709
    • IR-63761
    • SC-CICC: Characterization of IC Components

    Cite this

    Stavitski, N., van Dal, M. J. H., Klootwijk, J. H., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2006). Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 436-438). Utrecht, The Netherlands: STW.
    Stavitski, N. ; van Dal, M.J.H. ; Klootwijk, J.H. ; Wolters, Robertus A.M. ; Kovalgin, Alexeij Y. ; Schmitz, Jurriaan. / Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. pp. 436-438
    @inproceedings{7d1a179cfe67404e90b3f8e16ee64200,
    title = "Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization",
    abstract = "Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.",
    keywords = "EWI-8415, METIS-237709, IR-63761, SC-CICC: Characterization of IC Components",
    author = "N. Stavitski and {van Dal}, M.J.H. and J.H. Klootwijk and Wolters, {Robertus A.M.} and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    note = "http://eprints.ewi.utwente.nl/8415",
    year = "2006",
    month = "11",
    day = "23",
    language = "Undefined",
    isbn = "978-90-73461-44-4",
    publisher = "STW",
    number = "10",
    pages = "436--438",
    booktitle = "Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006",

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    Stavitski, N, van Dal, MJH, Klootwijk, JH, Wolters, RAM, Kovalgin, AY & Schmitz, J 2006, Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. in Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. STW, Utrecht, The Netherlands, pp. 436-438.

    Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. / Stavitski, N.; van Dal, M.J.H.; Klootwijk, J.H.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

    Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands : STW, 2006. p. 436-438.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

    AU - Stavitski, N.

    AU - van Dal, M.J.H.

    AU - Klootwijk, J.H.

    AU - Wolters, Robertus A.M.

    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

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    PY - 2006/11/23

    Y1 - 2006/11/23

    N2 - Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.

    AB - Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.

    KW - EWI-8415

    KW - METIS-237709

    KW - IR-63761

    KW - SC-CICC: Characterization of IC Components

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    SN - 978-90-73461-44-4

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    BT - Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006

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    CY - Utrecht, The Netherlands

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    Stavitski N, van Dal MJH, Klootwijk JH, Wolters RAM, Kovalgin AY, Schmitz J. Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW. 2006. p. 436-438