Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.
|Title of host publication||Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||3|
|Publication status||Published - 23 Nov 2006|
|Event||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands|
Duration: 23 Nov 2006 → 24 Nov 2006
Conference number: 9
|Publisher||Technology Foundation STW|
|Workshop||9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006|
|Period||23/11/06 → 24/11/06|
- SC-CICC: Characterization of IC Components
Stavitski, N., van Dal, M. J. H., Klootwijk, J. H., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2006). Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 436-438). Utrecht, The Netherlands: STW.