Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

N. Stavitski, M.J.H. van Dal, J.H. Klootwijk, Robertus A.M. Wolters, Alexeij Y. Kovalgin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    Abstract

    Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.
    Original languageUndefined
    Title of host publicationProceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages436-438
    Number of pages3
    ISBN (Print)978-90-73461-44-4
    Publication statusPublished - 23 Nov 2006
    Event9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands
    Duration: 23 Nov 200624 Nov 2006
    Conference number: 9

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number10

    Workshop

    Workshop9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
    CountryNetherlands
    CityVeldhoven
    Period23/11/0624/11/06

    Keywords

    • EWI-8415
    • METIS-237709
    • IR-63761
    • SC-CICC: Characterization of IC Components

    Cite this

    Stavitski, N., van Dal, M. J. H., Klootwijk, J. H., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2006). Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 436-438). Utrecht, The Netherlands: STW.