Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

N. Stavitski; M.J.H. van Dal; J.H. Klootwijk; Robertus A.M. Wolters; Alexeij Y. Kovalgin; Jurriaan Schmitz

Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

N. Stavitski
, M.J.H. van Dal
, J.H. Klootwijk
, Robertus A.M. Wolters
, Alexeij Y. Kovalgin
, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

3 Downloads (Pure)

Abstract

Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.

Original language	Undefined
Title of host publication	Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	436-438
Number of pages	3
ISBN (Print)	978-90-73461-44-4
Publication status	Published - 23 Nov 2006
Event	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9

Publication series

Name
Publisher	Technology Foundation STW
Number	10

Workshop

Workshop	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Country/Territory	Netherlands
City	Veldhoven
Period	23/11/06 → 24/11/06

Keywords

EWI-8415
METIS-237709
IR-63761
SC-CICC: Characterization of IC Components

Access to Document

http://eprints.eemcs.utwente.nl/secure2/8415/01/stavitski.pdf

Cite this

Stavitski, N., van Dal, M. J. H., Klootwijk, J. H., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2006). Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. In Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 (pp. 436-438). STW. http://eprints.eemcs.utwente.nl/secure2/8415/01/stavitski.pdf

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title = "Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization",

abstract = "Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.",

keywords = "EWI-8415, METIS-237709, IR-63761, SC-CICC: Characterization of IC Components",

author = "N. Stavitski and \{van Dal\}, M.J.H. and J.H. Klootwijk and Wolters, \{Robertus A.M.\} and Kovalgin, \{Alexeij Y.\} and Jurriaan Schmitz",

note = "http://eprints.ewi.utwente.nl/8415 ; 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 ; Conference date: 23-11-2006 Through 24-11-2006",

year = "2006",

month = nov,

day = "23",

language = "Undefined",

isbn = "978-90-73461-44-4",

publisher = "STW",

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Stavitski, N, van Dal, MJH, Klootwijk, JH, Wolters, RAM, Kovalgin, AY & Schmitz, J 2006, Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. in Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. STW, Utrecht, The Netherlands, pp. 436-438, 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006, Veldhoven, Netherlands, 23/11/06. <http://eprints.eemcs.utwente.nl/secure2/8415/01/stavitski.pdf>

Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization. / Stavitski, N.; van Dal, M.J.H.; Klootwijk, J.H. et al.
Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. Utrecht, The Netherlands: STW, 2006. p. 436-438.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

AU - Stavitski, N.

AU - van Dal, M.J.H.

AU - Klootwijk, J.H.

AU - Wolters, Robertus A.M.

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

N1 - Conference code: 9

PY - 2006/11/23

Y1 - 2006/11/23

N2 - Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.

AB - Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these geometry-related issues, we therefore designed and realized new CBKR structures having a large variety of contact shapes, overlaps and diffusion area widths. The process flow was adjusted for self-aligned silicides as well as for planar silicide structures.

KW - EWI-8415

KW - METIS-237709

KW - IR-63761

KW - SC-CICC: Characterization of IC Components

M3 - Conference contribution

SN - 978-90-73461-44-4

SP - 436

EP - 438

BT - Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006

PB - STW

CY - Utrecht, The Netherlands

T2 - 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006

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ER -