Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

N. Stavitski, J.H. Klootwijk, H.W. van Zeijl, Alexeij Y. Kovalgin, Robertus A.M. Wolters

    Research output: Contribution to journalArticleAcademicpeer-review

    33 Citations (Scopus)
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    Abstract

    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-tometal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable 蚠 extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
    Original languageUndefined
    Article number10.1109/TSM.2008.2010746
    Pages (from-to)146-152
    Number of pages7
    JournalIEEE transactions on semiconductor manufacturing
    Volume22
    Issue number1
    DOIs
    Publication statusPublished - 3 Feb 2009

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • EWI-15067
    • IR-65387
    • METIS-263738

    Cite this

    @article{d86b311b5d1e4802b481838efb840b45,
    title = "Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization",
    abstract = "The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-tometal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable 蚠 extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.",
    keywords = "SC-ICF: Integrated Circuit Fabrication, EWI-15067, IR-65387, METIS-263738",
    author = "N. Stavitski and J.H. Klootwijk and {van Zeijl}, H.W. and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",
    note = "http://eprints.ewi.utwente.nl/15067",
    year = "2009",
    month = "2",
    day = "3",
    doi = "10.1109/TSM.2008.2010746",
    language = "Undefined",
    volume = "22",
    pages = "146--152",
    journal = "IEEE transactions on semiconductor manufacturing",
    issn = "0894-6507",
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    }

    Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization. / Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    In: IEEE transactions on semiconductor manufacturing, Vol. 22, No. 1, 10.1109/TSM.2008.2010746, 03.02.2009, p. 146-152.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

    AU - Stavitski, N.

    AU - Klootwijk, J.H.

    AU - van Zeijl, H.W.

    AU - Kovalgin, Alexeij Y.

    AU - Wolters, Robertus A.M.

    N1 - http://eprints.ewi.utwente.nl/15067

    PY - 2009/2/3

    Y1 - 2009/2/3

    N2 - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-tometal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable 蚠 extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.

    AB - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-tometal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable 蚠 extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.

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