Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

N. Stavitski, J.H. Klootwijk, H.W. van Zeijl, Alexeij Y. Kovalgin, Robertus A.M. Wolters

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    Abstract

    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-tometal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable 蚠 extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
    Original languageUndefined
    Article number10.1109/TSM.2008.2010746
    Pages (from-to)146-152
    Number of pages7
    JournalIEEE transactions on semiconductor manufacturing
    Volume22
    Issue number1
    DOIs
    Publication statusPublished - 3 Feb 2009

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • EWI-15067
    • IR-65387
    • METIS-263738

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