The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-tometal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable 蚠 extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
- SC-ICF: Integrated Circuit Fabrication
Stavitski, N., Klootwijk, J. H., van Zeijl, H. W., Kovalgin, A. Y., & Wolters, R. A. M. (2009). Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization. IEEE transactions on semiconductor manufacturing, 22(1), 146-152. [10.1109/TSM.2008.2010746]. https://doi.org/10.1109/TSM.2008.2010746