Crystal growth and characterization of MT2Si2 ternary intermetallics (M = U, RE and T = 3d, 4d, 5d transition metals)

A. A. Menovsky; A. C. Moleman; G. E. Snel; T. J. Gortenmulder; H. J. Tan; T. T.M. Palstra

doi:10.1016/0022-0248(86)90455-0

Crystal growth and characterization of MT₂Si₂ ternary intermetallics (M = U, RE and T = 3d, 4d, 5d transition metals)

A. A. Menovsky^*, A. C. Moleman, G. E. Snel, T. J. Gortenmulder, H. J. Tan, T. T.M. Palstra

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Bulk single crystals of the ternary intermetallic compounds UT₂Si₂ (T = Ni, Pd, Pt and Ru), LaT₂Si₂ (T = Pd and Rh) and LuPd₂Si₂ have been grown from the melt with a modified "tri-arc" Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The measured densities are compared with the calculated densities as obtained from the lattice parameters. A detailed metallography analysis of both polycrystalline and single-crystalline samples shows that the Mt₂Si₂ intermetallics exist only in a very narrow homogeneity range and that the segregation of second phase is almost always present in polycrystalline samples and can severely mask the intrinsic properties of these materials. The effect of heat treatment on the electrical resistivity of single-crystalline URu₂Si₂ is presented, along with some preliminary results on the crystal growth of URh₂Ge₂.

Original language	English
Pages (from-to)	316-321
Number of pages	6
Journal	Journal of crystal growth
Volume	79
Issue number	1-3
DOIs	https://doi.org/10.1016/0022-0248(86)90455-0
Publication status	Published - 2 Dec 1986
Externally published	Yes

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title = "Crystal growth and characterization of MT2Si2 ternary intermetallics (M = U, RE and T = 3d, 4d, 5d transition metals)",

abstract = "Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified {"}tri-arc{"} Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The measured densities are compared with the calculated densities as obtained from the lattice parameters. A detailed metallography analysis of both polycrystalline and single-crystalline samples shows that the Mt2Si2 intermetallics exist only in a very narrow homogeneity range and that the segregation of second phase is almost always present in polycrystalline samples and can severely mask the intrinsic properties of these materials. The effect of heat treatment on the electrical resistivity of single-crystalline URu2Si2 is presented, along with some preliminary results on the crystal growth of URh2Ge2.",

author = "Menovsky, {A. A.} and Moleman, {A. C.} and Snel, {G. E.} and Gortenmulder, {T. J.} and Tan, {H. J.} and Palstra, {T. T.M.}",

year = "1986",

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doi = "10.1016/0022-0248(86)90455-0",

language = "English",

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T1 - Crystal growth and characterization of MT2Si2 ternary intermetallics (M = U, RE and T = 3d, 4d, 5d transition metals)

AU - Menovsky, A. A.

AU - Moleman, A. C.

AU - Snel, G. E.

AU - Gortenmulder, T. J.

AU - Tan, H. J.

AU - Palstra, T. T.M.

PY - 1986/12/2

Y1 - 1986/12/2

N2 - Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified "tri-arc" Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The measured densities are compared with the calculated densities as obtained from the lattice parameters. A detailed metallography analysis of both polycrystalline and single-crystalline samples shows that the Mt2Si2 intermetallics exist only in a very narrow homogeneity range and that the segregation of second phase is almost always present in polycrystalline samples and can severely mask the intrinsic properties of these materials. The effect of heat treatment on the electrical resistivity of single-crystalline URu2Si2 is presented, along with some preliminary results on the crystal growth of URh2Ge2.

AB - Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified "tri-arc" Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The measured densities are compared with the calculated densities as obtained from the lattice parameters. A detailed metallography analysis of both polycrystalline and single-crystalline samples shows that the Mt2Si2 intermetallics exist only in a very narrow homogeneity range and that the segregation of second phase is almost always present in polycrystalline samples and can severely mask the intrinsic properties of these materials. The effect of heat treatment on the electrical resistivity of single-crystalline URu2Si2 is presented, along with some preliminary results on the crystal growth of URh2Ge2.

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DO - 10.1016/0022-0248(86)90455-0

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AN - SCOPUS:0345301182

SN - 0022-0248

VL - 79

SP - 316

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JO - Journal of crystal growth

JF - Journal of crystal growth

IS - 1-3

ER -

Crystal growth and characterization of MT₂Si₂ ternary intermetallics (M = U, RE and T = 3d, 4d, 5d transition metals)

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