Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer

Research output: Contribution to conferencePosterAcademic

Abstract

Topological insulators have a non-trivial band structure, forming gapless surface states when coupled to a normal insulator [1]. Until now, applications are hindered by the competition between the insulating bulk and conducting surface states. Perovskite oxides offer a good alternative, since topological insulating phases are theoretically predicted with band gaps larger than the thermal excitation energy at room temperature [2]. Therefore, promising applications for these materials lie in the elds of quantum computing and spintronics.

In YBiO3, a topological insulating phase is predicted for the perovskite crystal structure with yttrium and bismuth located at the A-site and B-site, respectively [3]. However, the fluorite phase is thermodynamically more stable than the perovskite phase as proven when an YBiO3 lm is grown directly on a SrTiO3 substrate. By using a buffer layer, a possibility is given to stabilise the perovskite phase in the YBiO3 film.

As buffer layer material BaBiO3 is chosen, since it grows in the perovskite phase and has a comparable lattice constant as predicted for the perovskite YBiO3 structure. By various characterisation techniques, it is shown that BaBiO3 grows as a single oriented perovskite lm in a relaxed state despite the large lattice mismatch with the underlying SrTiO3 substrate.

When the YBiO3 is deposited on top of the buer layer, a single oriented perovskite phase is also observed in this lm with the expected lattice constants. These ndings pave a way towards the fabrication of quantum devices for testing the hypothesised topological insulating phase in YBiO3.

[1] Y. Ando et al., Journal of the Physical Society Japan 82(10), 102001 (2013).
[2] Y. Zhang et al., Phys. Chem. Chem. Phys. 18(11), 8205-8211 (2016).
[3] H. Jin et al., Scientic Reports 3, 1651 (2013).
Original languageEnglish
Publication statusPublished - 24 Jul 2018
EventConference on Topological and Correlated Electronic Materials 2018 - Maritim Hotel Wuerzburg, Wurzburg, Germany
Duration: 23 Jul 201827 Jul 2018
http://tocotronics2018.uni-wuerzburg.de/

Conference

ConferenceConference on Topological and Correlated Electronic Materials 2018
Abbreviated titleToCoTronics2018
CountryGermany
CityWurzburg
Period23/07/1827/07/18
Internet address

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phase control
buffers
thin films
insulators
crystals
fluorite
quantum computation
yttrium
bismuth
Japan
conduction
fabrication
crystal structure
oxides
room temperature
excitation
energy

Cite this

Bouwmeester, R. L., de Hond, C. A. J., Gauquelin, N., Verbeeck, J., Koster, G., & Brinkman, A. (2018). Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer. Poster session presented at Conference on Topological and Correlated Electronic Materials 2018, Wurzburg, Germany.
Bouwmeester, Rosa Luca ; de Hond, C.A.J. ; Gauquelin, Nicolas ; Verbeeck, J. ; Koster, G. ; Brinkman, Alexander . / Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer. Poster session presented at Conference on Topological and Correlated Electronic Materials 2018, Wurzburg, Germany.
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Bouwmeester, RL, de Hond, CAJ, Gauquelin, N, Verbeeck, J, Koster, G & Brinkman, A 2018, 'Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer' Conference on Topological and Correlated Electronic Materials 2018, Wurzburg, Germany, 23/07/18 - 27/07/18, .

Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer. / Bouwmeester, Rosa Luca; de Hond, C.A.J.; Gauquelin, Nicolas; Verbeeck, J.; Koster, G.; Brinkman, Alexander .

2018. Poster session presented at Conference on Topological and Correlated Electronic Materials 2018, Wurzburg, Germany.

Research output: Contribution to conferencePosterAcademic

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T1 - Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer

AU - Bouwmeester, Rosa Luca

AU - de Hond, C.A.J.

AU - Gauquelin, Nicolas

AU - Verbeeck, J.

AU - Koster, G.

AU - Brinkman, Alexander

PY - 2018/7/24

Y1 - 2018/7/24

N2 - Topological insulators have a non-trivial band structure, forming gapless surface states when coupled to a normal insulator [1]. Until now, applications are hindered by the competition between the insulating bulk and conducting surface states. Perovskite oxides offer a good alternative, since topological insulating phases are theoretically predicted with band gaps larger than the thermal excitation energy at room temperature [2]. Therefore, promising applications for these materials lie in the elds of quantum computing and spintronics.In YBiO3, a topological insulating phase is predicted for the perovskite crystal structure with yttrium and bismuth located at the A-site and B-site, respectively [3]. However, the fluorite phase is thermodynamically more stable than the perovskite phase as proven when an YBiO3 lm is grown directly on a SrTiO3 substrate. By using a buffer layer, a possibility is given to stabilise the perovskite phase in the YBiO3 film.As buffer layer material BaBiO3 is chosen, since it grows in the perovskite phase and has a comparable lattice constant as predicted for the perovskite YBiO3 structure. By various characterisation techniques, it is shown that BaBiO3 grows as a single oriented perovskite lm in a relaxed state despite the large lattice mismatch with the underlying SrTiO3 substrate.When the YBiO3 is deposited on top of the buer layer, a single oriented perovskite phase is also observed in this lm with the expected lattice constants. These ndings pave a way towards the fabrication of quantum devices for testing the hypothesised topological insulating phase in YBiO3.[1] Y. Ando et al., Journal of the Physical Society Japan 82(10), 102001 (2013).[2] Y. Zhang et al., Phys. Chem. Chem. Phys. 18(11), 8205-8211 (2016).[3] H. Jin et al., Scientic Reports 3, 1651 (2013).

AB - Topological insulators have a non-trivial band structure, forming gapless surface states when coupled to a normal insulator [1]. Until now, applications are hindered by the competition between the insulating bulk and conducting surface states. Perovskite oxides offer a good alternative, since topological insulating phases are theoretically predicted with band gaps larger than the thermal excitation energy at room temperature [2]. Therefore, promising applications for these materials lie in the elds of quantum computing and spintronics.In YBiO3, a topological insulating phase is predicted for the perovskite crystal structure with yttrium and bismuth located at the A-site and B-site, respectively [3]. However, the fluorite phase is thermodynamically more stable than the perovskite phase as proven when an YBiO3 lm is grown directly on a SrTiO3 substrate. By using a buffer layer, a possibility is given to stabilise the perovskite phase in the YBiO3 film.As buffer layer material BaBiO3 is chosen, since it grows in the perovskite phase and has a comparable lattice constant as predicted for the perovskite YBiO3 structure. By various characterisation techniques, it is shown that BaBiO3 grows as a single oriented perovskite lm in a relaxed state despite the large lattice mismatch with the underlying SrTiO3 substrate.When the YBiO3 is deposited on top of the buer layer, a single oriented perovskite phase is also observed in this lm with the expected lattice constants. These ndings pave a way towards the fabrication of quantum devices for testing the hypothesised topological insulating phase in YBiO3.[1] Y. Ando et al., Journal of the Physical Society Japan 82(10), 102001 (2013).[2] Y. Zhang et al., Phys. Chem. Chem. Phys. 18(11), 8205-8211 (2016).[3] H. Jin et al., Scientic Reports 3, 1651 (2013).

M3 - Poster

ER -

Bouwmeester RL, de Hond CAJ, Gauquelin N, Verbeeck J, Koster G, Brinkman A. Crystal phase control in an YBiO3 thin film by using a BaBiO3 buffer layer. 2018. Poster session presented at Conference on Topological and Correlated Electronic Materials 2018, Wurzburg, Germany.