Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

G. Nogay, A. Ingenito, E. Rucavado, Q. Jeangros, J. Stuckelberger, P. Wyss, M. Morales-Masis, F. Haug, P. Loper, C. Ballif

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42 Citations (Scopus)


We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiO x and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 °C, excellent surface passivation on the p-type planar crystalline silicon wafer is obtained for both electron- and hole-selective contacts. Their potential is demonstrated at the device level by employing a simple process flow, in which the junction formation of the two polarities is achieved with a single coannealing step. Both-side-contacted patterning-free planar p-type cells with an area of 4 cm 2 and screen-printed metallization reach a fill factor of 83.4% and a open-circuit voltage of 726 mV. Zirconium-doped indium oxide with excellent optoelectrical properties is used as a front electrode. The decrease in the parasitic absorption in the front electrode results in higher photogenerated current. By realizing front-side-textured and rear-side-planar p -type cells, an efficiency of up to 22.6% is achieved.
Original languageEnglish
Pages (from-to)1478-1485
JournalIEEE journal of photovoltaics
Issue number6
Publication statusPublished - Nov 2018
Externally publishedYes

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