TY - JOUR
T1 - Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts
AU - Nogay, G.
AU - Ingenito, A.
AU - Rucavado, E.
AU - Jeangros, Q.
AU - Stuckelberger, J.
AU - Wyss, P.
AU - Morales-Masis, M.
AU - Haug, F.
AU - Loper, P.
AU - Ballif, C.
PY - 2018/11
Y1 - 2018/11
N2 - We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiO x and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 °C, excellent surface passivation on the p-type planar crystalline silicon wafer is obtained for both electron- and hole-selective contacts. Their potential is demonstrated at the device level by employing a simple process flow, in which the junction formation of the two polarities is achieved with a single coannealing step. Both-side-contacted patterning-free planar p-type cells with an area of 4 cm 2 and screen-printed metallization reach a fill factor of 83.4% and a open-circuit voltage of 726 mV. Zirconium-doped indium oxide with excellent optoelectrical properties is used as a front electrode. The decrease in the parasitic absorption in the front electrode results in higher photogenerated current. By realizing front-side-textured and rear-side-planar p -type cells, an efficiency of up to 22.6% is achieved.
AB - We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiO x and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 °C, excellent surface passivation on the p-type planar crystalline silicon wafer is obtained for both electron- and hole-selective contacts. Their potential is demonstrated at the device level by employing a simple process flow, in which the junction formation of the two polarities is achieved with a single coannealing step. Both-side-contacted patterning-free planar p-type cells with an area of 4 cm 2 and screen-printed metallization reach a fill factor of 83.4% and a open-circuit voltage of 726 mV. Zirconium-doped indium oxide with excellent optoelectrical properties is used as a front electrode. The decrease in the parasitic absorption in the front electrode results in higher photogenerated current. By realizing front-side-textured and rear-side-planar p -type cells, an efficiency of up to 22.6% is achieved.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85053136496&partnerID=MN8TOARS
U2 - 10.1109/JPHOTOV.2018.2866189
DO - 10.1109/JPHOTOV.2018.2866189
M3 - Article
SN - 2156-3381
VL - 8
SP - 1478
EP - 1485
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
IS - 6
ER -