Abstract
Transparent conductive materials (TCMs) are a unique class of semiconductors that combine optical transparency with electronic conductivity, making them critical components in various electronic devices, such as solar cells, touchscreens, displays, transistors, and smart windows. While n-type TCMs have seen significant technological advancements and widespread use, the performance of p-type TCMs lags behind, primarily due to their low electrical conductivity. This disparity poses a significant barrier to the development of fully transparent electronic systems.
In this thesis, we explore innovative doping strategies to enhance the p-type conductivity of copper iodide, a wide bandgap semiconductor. The first two sections focus on the roles of sulfur and cesium as dopants, using a range of structural and optoelectronic characterization techniques. Our findings reveal that these elements act as indirect dopants, facilitating favorable growth conditions that promote native defect formation, which enhances conductivity. These unconventional dopants will inspire further exploration of new doping strategies for p-type TCMs.
In the final section, we present ultra-thin p-type copper sulfide as a promising alternative to indium oxide-based n-type TCMs in photovoltaic applications. This approach demonstrates the potential for integrating narrow bandgap, high-conductivity p-type TCMs into transparent electronic systems. Our work provides a foundation for reimagining the role of p-type TCMs and encourages future research into novel applications and materials in this field.
In this thesis, we explore innovative doping strategies to enhance the p-type conductivity of copper iodide, a wide bandgap semiconductor. The first two sections focus on the roles of sulfur and cesium as dopants, using a range of structural and optoelectronic characterization techniques. Our findings reveal that these elements act as indirect dopants, facilitating favorable growth conditions that promote native defect formation, which enhances conductivity. These unconventional dopants will inspire further exploration of new doping strategies for p-type TCMs.
In the final section, we present ultra-thin p-type copper sulfide as a promising alternative to indium oxide-based n-type TCMs in photovoltaic applications. This approach demonstrates the potential for integrating narrow bandgap, high-conductivity p-type TCMs into transparent electronic systems. Our work provides a foundation for reimagining the role of p-type TCMs and encourages future research into novel applications and materials in this field.
Original language | English |
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Qualification | Doctor of Philosophy |
Awarding Institution |
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Supervisors/Advisors |
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Award date | 5 Feb 2025 |
Place of Publication | Enschede |
Publisher | |
Print ISBNs | 978-90-365-6376-5 |
Electronic ISBNs | 978-90-365-6377-2 |
DOIs | |
Publication status | Published - Feb 2025 |