Current Sharing in Trench MOSFETs During Fast Switching Transients

Riccardo Tambone; Alessandro Ferrara; Filippo Magrini; Raymond J.E. Hueting

doi:10.23919/ISPSD62843.2025.11117282

Current Sharing in Trench MOSFETs During Fast Switching Transients

Riccardo Tambone^*
, Alessandro Ferrara
, Filippo Magrini
, Raymond J.E. Hueting

^*Corresponding author for this work

Power Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Minimizing the on-resistance (R_DSon) of power MOSFETs often reduces their ruggedness, i.e. the ability to withstand extraordinary electrical stress events. In this work, we investigate current sharing between trench blocks of different lengths in split-gate trench (SGT) MOSFETs during fast switching transients. We use novel test structures on a Transmission Line Pulse (TLP) setup to measure current sharing and then calibrate a distributed SPICE model for chip-scale electro-thermal simulations. Using this model, we demonstrate how different doping profiles impact current sharing between trench blocks inside the MOSFET, affecting the trade-off between the R_DSon and (fast transient) ruggedness.

Original language	English
Title of host publication	Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025
Publisher	IEEE
Pages	69-72
Number of pages	4
ISBN (Electronic)	978-4-88686-441-3
ISBN (Print)	979-8-3315-4126-2
DOIs	https://doi.org/10.23919/ISPSD62843.2025.11117282
Publication status	Published - 19 Aug 2025
Event	37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025 - Kumamoto-Jo Hall, Kumamoto, Japan Duration: 1 Jun 2025 → 5 Jun 2025 Conference number: 37 https://www.ispsd2025.com/

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Publisher	IEEE
Volume	2025
ISSN (Print)	1063-6854
ISSN (Electronic)	1946-0201

Conference

Conference	37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025
Abbreviated title	ISPSD 2025
Country/Territory	Japan
City	Kumamoto
Period	1/06/25 → 5/06/25
Internet address	https://www.ispsd2025.com/

Keywords

2026 OA procedure
Distributed effects
Field plate
MOSFET
Simulations
SPICE
Split-gate
Test structure
TLP
Current sharing

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10.23919/ISPSD62843.2025.11117282

Conference paperFinal published version, 708 KBLicence: Taverne

Cite this

Tambone, R., Ferrara, A., Magrini, F., & Hueting, R. J. E. (2025). Current Sharing in Trench MOSFETs During Fast Switching Transients. In Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025 (pp. 69-72). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2025). IEEE. https://doi.org/10.23919/ISPSD62843.2025.11117282

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title = "Current Sharing in Trench MOSFETs During Fast Switching Transients",

abstract = "Minimizing the on-resistance (R\_DSon) of power MOSFETs often reduces their ruggedness, i.e. the ability to withstand extraordinary electrical stress events. In this work, we investigate current sharing between trench blocks of different lengths in split-gate trench (SGT) MOSFETs during fast switching transients. We use novel test structures on a Transmission Line Pulse (TLP) setup to measure current sharing and then calibrate a distributed SPICE model for chip-scale electro-thermal simulations. Using this model, we demonstrate how different doping profiles impact current sharing between trench blocks inside the MOSFET, affecting the trade-off between the R\_DSon and (fast transient) ruggedness.",

keywords = "2026 OA procedure, Distributed effects, Field plate, MOSFET, Simulations, SPICE, Split-gate, Test structure, TLP, Current sharing",

author = "Riccardo Tambone and Alessandro Ferrara and Filippo Magrini and Hueting, \{Raymond J.E.\}",

note = "Publisher Copyright: {\textcopyright} 2025 The Institute of Electrical Engineers of Japan - IEEJ.; 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, ISPSD 2025 ; Conference date: 01-06-2025 Through 05-06-2025",

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doi = "10.23919/ISPSD62843.2025.11117282",

language = "English",

isbn = "979-8-3315-4126-2",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "IEEE",

pages = "69--72",

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}

Tambone, R, Ferrara, A, Magrini, F & Hueting, RJE 2025, Current Sharing in Trench MOSFETs During Fast Switching Transients. in Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2025, IEEE, pp. 69-72, 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025, Kumamoto, Japan, 1/06/25. https://doi.org/10.23919/ISPSD62843.2025.11117282

Current Sharing in Trench MOSFETs During Fast Switching Transients. / Tambone, Riccardo; Ferrara, Alessandro; Magrini, Filippo et al.
Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. IEEE, 2025. p. 69-72 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2025).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Tambone, Riccardo

AU - Ferrara, Alessandro

AU - Magrini, Filippo

AU - Hueting, Raymond J.E.

N1 - Conference code: 37

PY - 2025/8/19

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N2 - Minimizing the on-resistance (R_DSon) of power MOSFETs often reduces their ruggedness, i.e. the ability to withstand extraordinary electrical stress events. In this work, we investigate current sharing between trench blocks of different lengths in split-gate trench (SGT) MOSFETs during fast switching transients. We use novel test structures on a Transmission Line Pulse (TLP) setup to measure current sharing and then calibrate a distributed SPICE model for chip-scale electro-thermal simulations. Using this model, we demonstrate how different doping profiles impact current sharing between trench blocks inside the MOSFET, affecting the trade-off between the R_DSon and (fast transient) ruggedness.

AB - Minimizing the on-resistance (R_DSon) of power MOSFETs often reduces their ruggedness, i.e. the ability to withstand extraordinary electrical stress events. In this work, we investigate current sharing between trench blocks of different lengths in split-gate trench (SGT) MOSFETs during fast switching transients. We use novel test structures on a Transmission Line Pulse (TLP) setup to measure current sharing and then calibrate a distributed SPICE model for chip-scale electro-thermal simulations. Using this model, we demonstrate how different doping profiles impact current sharing between trench blocks inside the MOSFET, affecting the trade-off between the R_DSon and (fast transient) ruggedness.

KW - 2026 OA procedure

KW - Distributed effects

KW - Field plate

KW - MOSFET

KW - Simulations

KW - SPICE

KW - Split-gate

KW - Test structure

KW - TLP

KW - Current sharing

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M3 - Conference contribution

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SN - 979-8-3315-4126-2

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

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BT - Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025

PB - IEEE

T2 - 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025

Y2 - 1 June 2025 through 5 June 2025

ER -

Current Sharing in Trench MOSFETs During Fast Switching Transients

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Keywords

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