Current-Voltage Characteristics of Gate Oxides after Hard Breakdown

T. Bearda, P.H. Woerlee, Hans Wallinga, P.W. Mertens, M.M. Heyns

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the International Conference on Solid State Devices and Materials
    Place of PublicationTokyo, Japan
    Pages212-213
    Number of pages2
    Publication statusPublished - 26 Sept 2001
    EventInternational Conference on Solid State Devices and Materials: Proceedings of the International Conference on Solid State Devices and Materials - Tokyo, Japan
    Duration: 26 Sept 200128 Sept 2001

    Conference

    ConferenceInternational Conference on Solid State Devices and Materials
    CityTokyo, Japan
    Period26/09/0128/09/01

    Keywords

    • METIS-202413

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