Current-Voltage Characteristics of Gate Oxides after Hard Breakdown

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings of the International Conference on Solid State Devices and Materials
Place of Publication	Tokyo, Japan
Pages	212-213
Number of pages	2
Publication status	Published - 26 Sept 2001
Event	International Conference on Solid State Devices and Materials: Proceedings of the International Conference on Solid State Devices and Materials - Tokyo, Japan Duration: 26 Sept 2001 → 28 Sept 2001

Conference	International Conference on Solid State Devices and Materials
City	Tokyo, Japan
Period	26/09/01 → 28/09/01

Keywords

@inproceedings{d3045a1075c34e6e84c66cfefe55666a,

title = "Current-Voltage Characteristics of Gate Oxides after Hard Breakdown",

keywords = "METIS-202413",

author = "T. Bearda and P.H. Woerlee and Hans Wallinga and P.W. Mertens and M.M. Heyns",

year = "2001",

month = sep,

day = "26",

language = "Undefined",

isbn = "4-89114-016-x",

pages = "212--213",

booktitle = "Proceedings of the International Conference on Solid State Devices and Materials",

note = "International Conference on Solid State Devices and Materials ; Conference date: 26-09-2001 Through 28-09-2001",

}

TY - GEN

T1 - Current-Voltage Characteristics of Gate Oxides after Hard Breakdown

AU - Bearda, T.

AU - Woerlee, P.H.

AU - Wallinga, Hans

AU - Mertens, P.W.

AU - Heyns, M.M.

PY - 2001/9/26

Y1 - 2001/9/26

KW - METIS-202413

M3 - Conference contribution

SN - 4-89114-016-x

SP - 212

EP - 213

BT - Proceedings of the International Conference on Solid State Devices and Materials

CY - Tokyo, Japan

T2 - International Conference on Solid State Devices and Materials

Y2 - 26 September 2001 through 28 September 2001

ER -