"CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer"

C. J. Ortiz*, L. K. Nanver, W. D. Van Noort, T. L.M. Scholtes, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n/sup -/p/sup -/n/sup +/ or ip/sup -/n/sup +/ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si/sub 1-x/Ge/sub x/ is demonstrated both experimentally and via simulations.

Original languageEnglish
Title of host publicationProceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002
Pages83-88
Number of pages6
DOIs
Publication statusPublished - 1 Dec 2002
Externally publishedYes
Event2002 International Conference on Microelectronic Test Structures - Cork, Ireland
Duration: 8 Apr 200211 Apr 2002

Conference

Conference2002 International Conference on Microelectronic Test Structures
Abbreviated titleICMTS 2002
CountryIreland
CityCork
Period8/04/0211/04/02

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Cite this

Ortiz, C. J., Nanver, L. K., Van Noort, W. D., Scholtes, T. L. M., & Slotboom, J. W. (2002). "CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer". In Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002 (pp. 83-88) https://doi.org/10.1109/ICMTS.2002.1193176