"CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer"

C. J. Ortiz; L. K. Nanver; W. D. Van Noort; T. L.M. Scholtes; J. W. Slotboom

doi:10.1109/ICMTS.2002.1193176

"CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer"

C. J. Ortiz^*, L. K. Nanver, W. D. Van Noort, T. L.M. Scholtes, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n/sup -/p/sup -/n/sup +/ or ip/sup -/n/sup +/ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si/sub 1-x/Ge/sub x/ is demonstrated both experimentally and via simulations.

Original language	English
Title of host publication	Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002
Pages	83-88
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2002.1193176
Publication status	Published - 1 Dec 2002
Externally published	Yes
Event	2002 International Conference on Microelectronic Test Structures - Cork, Ireland Duration: 8 Apr 2002 → 11 Apr 2002

Conference

Conference	2002 International Conference on Microelectronic Test Structures
Abbreviated title	ICMTS 2002
Country/Territory	Ireland
City	Cork
Period	8/04/02 → 11/04/02

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10.1109/ICMTS.2002.1193176

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@inproceedings{760355f85e5d44bbb8c9ae6c438e6a8d,

title = "{"}CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer{"}",

abstract = "The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n/sup -/p/sup -/n/sup +/ or ip/sup -/n/sup +/ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si/sub 1-x/Ge/sub x/ is demonstrated both experimentally and via simulations.",

author = "Ortiz, {C. J.} and Nanver, {L. K.} and {Van Noort}, {W. D.} and Scholtes, {T. L.M.} and Slotboom, {J. W.}",

year = "2002",

month = dec,

day = "1",

doi = "10.1109/ICMTS.2002.1193176",

language = "English",

isbn = "0-7803-7464-9",

pages = "83--88",

booktitle = "Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002",

note = "2002 International Conference on Microelectronic Test Structures , ICMTS 2002 ; Conference date: 08-04-2002 Through 11-04-2002",

}

Ortiz, CJ, Nanver, LK, Van Noort, WD, Scholtes, TLM & Slotboom, JW 2002, "CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer". in Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. pp. 83-88, 2002 International Conference on Microelectronic Test Structures , Cork, Ireland, 8/04/02. https://doi.org/10.1109/ICMTS.2002.1193176

"CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer". / Ortiz, C. J.; Nanver, L. K.; Van Noort, W. D. et al.
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. 2002. p. 83-88.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - "CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer"

AU - Ortiz, C. J.

AU - Nanver, L. K.

AU - Van Noort, W. D.

AU - Scholtes, T. L.M.

AU - Slotboom, J. W.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n/sup -/p/sup -/n/sup +/ or ip/sup -/n/sup +/ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si/sub 1-x/Ge/sub x/ is demonstrated both experimentally and via simulations.

AB - The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n/sup -/p/sup -/n/sup +/ or ip/sup -/n/sup +/ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si/sub 1-x/Ge/sub x/ is demonstrated both experimentally and via simulations.

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U2 - 10.1109/ICMTS.2002.1193176

DO - 10.1109/ICMTS.2002.1193176

M3 - Conference contribution

AN - SCOPUS:0037481718

SN - 0-7803-7464-9

SP - 83

EP - 88

BT - Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002

T2 - 2002 International Conference on Microelectronic Test Structures

Y2 - 8 April 2002 through 11 April 2002

ER -

"CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer"

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