CVD delta-doped boron surface layers for ultra-shallow junction formation

Francesco Sarubbi*, Lis K. Nanver, Tom L.M. Scholtes

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

28 Citations (Scopus)


A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α-B/BxSi stack have been studied by fabricating and measuring diodes where the B depositions are formed directly in the diode contact windows for different exposure times. It is demonstrated that the presented doping technique can be used to form high-quality δ-doped p+n junctions. Moreover, the formed α-B/BxSi layer is an attractive source of high-concentration B dopants for thermal annealing processes that does not induce any transient-enhanced diffusion (TED) effects. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
EditorsF. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev
Place of PublicationPennington, N.J.
PublisherThe Electrochemical Society Inc.
Number of pages10
ISBN (Print)1-56677-502-7
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

NameECS Transactions
PublisherThe Electrochemical Society Inc.
ISSN (Print)1938-5862


Conference210th Electrochemical Society Meeting, ECS 2006
Abbreviated titleECS 2006

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