CVD delta-doped boron surface layers for ultra-shallow junction formation

Francesco Sarubbi, Lis K. Nanver, Tom L.M. Scholtes

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

20 Citations (Scopus)

Abstract

A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α-B/BxSi stack have been studied by fabricating and measuring diodes where the B depositions are formed directly in the diode contact windows for different exposure times. It is demonstrated that the presented doping technique can be used to form high-quality δ-doped p+n junctions. Moreover, the formed α-B/BxSi layer is an attractive source of high-concentration B dopants for thermal annealing processes that does not induce any transient-enhanced diffusion (TED) effects. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
EditorsF. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev
Place of PublicationPennington, N.J.
PublisherThe Electrochemical Society Inc.
Pages35-44
Number of pages10
ISBN (Print)1-56677-502-7
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

NameECS Transactions
PublisherThe Electrochemical Society Inc.
Number2
Volume3
ISSN (Print)1938-5862

Conference

Conference210th Electrochemical Society Meeting, ECS 2006
Abbreviated titleECS 2006
CountryMexico
CityCancún
Period29/10/063/11/06

Fingerprint

Boron
Chemical vapor deposition
Doping (additives)
Diodes
Low pressure chemical vapor deposition
Electric properties
Annealing
Silicon
Hot Temperature

Cite this

Sarubbi, F., Nanver, L. K., & Scholtes, T. L. M. (2006). CVD delta-doped boron surface layers for ultra-shallow junction formation. In F. Roozeboom, D-L. Kwong, H. Iwai, M. C. Öztürk, P. J. Timans, & E. Gusev (Eds.), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment (pp. 35-44). (ECS Transactions; Vol. 3, No. 2). Pennington, N.J.: The Electrochemical Society Inc.. https://doi.org/10.1149/1.2356262
Sarubbi, Francesco ; Nanver, Lis K. ; Scholtes, Tom L.M. / CVD delta-doped boron surface layers for ultra-shallow junction formation. Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. editor / F. Roozeboom ; D.-L. Kwong ; H. Iwai ; M.C. Öztürk ; P.J. Timans ; E. Gusev. Pennington, N.J. : The Electrochemical Society Inc., 2006. pp. 35-44 (ECS Transactions; 2).
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abstract = "A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α-B/BxSi stack have been studied by fabricating and measuring diodes where the B depositions are formed directly in the diode contact windows for different exposure times. It is demonstrated that the presented doping technique can be used to form high-quality δ-doped p+n junctions. Moreover, the formed α-B/BxSi layer is an attractive source of high-concentration B dopants for thermal annealing processes that does not induce any transient-enhanced diffusion (TED) effects. copyright The Electrochemical Society.",
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Sarubbi, F, Nanver, LK & Scholtes, TLM 2006, CVD delta-doped boron surface layers for ultra-shallow junction formation. in F Roozeboom, D-L Kwong, H Iwai, MC Öztürk, PJ Timans & E Gusev (eds), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ECS Transactions, no. 2, vol. 3, The Electrochemical Society Inc., Pennington, N.J., pp. 35-44, 210th Electrochemical Society Meeting, ECS 2006, Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2356262

CVD delta-doped boron surface layers for ultra-shallow junction formation. / Sarubbi, Francesco; Nanver, Lis K.; Scholtes, Tom L.M.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ed. / F. Roozeboom; D.-L. Kwong; H. Iwai; M.C. Öztürk; P.J. Timans; E. Gusev. Pennington, N.J. : The Electrochemical Society Inc., 2006. p. 35-44 (ECS Transactions; Vol. 3, No. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - CVD delta-doped boron surface layers for ultra-shallow junction formation

AU - Sarubbi, Francesco

AU - Nanver, Lis K.

AU - Scholtes, Tom L.M.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α-B/BxSi stack have been studied by fabricating and measuring diodes where the B depositions are formed directly in the diode contact windows for different exposure times. It is demonstrated that the presented doping technique can be used to form high-quality δ-doped p+n junctions. Moreover, the formed α-B/BxSi layer is an attractive source of high-concentration B dopants for thermal annealing processes that does not induce any transient-enhanced diffusion (TED) effects. copyright The Electrochemical Society.

AB - A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α-B/BxSi stack have been studied by fabricating and measuring diodes where the B depositions are formed directly in the diode contact windows for different exposure times. It is demonstrated that the presented doping technique can be used to form high-quality δ-doped p+n junctions. Moreover, the formed α-B/BxSi layer is an attractive source of high-concentration B dopants for thermal annealing processes that does not induce any transient-enhanced diffusion (TED) effects. copyright The Electrochemical Society.

U2 - 10.1149/1.2356262

DO - 10.1149/1.2356262

M3 - Conference contribution

SN - 1-56677-502-7

T3 - ECS Transactions

SP - 35

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BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment

A2 - Roozeboom, F.

A2 - Kwong, D.-L.

A2 - Iwai, H.

A2 - Öztürk, M.C.

A2 - Timans, P.J.

A2 - Gusev, E.

PB - The Electrochemical Society Inc.

CY - Pennington, N.J.

ER -

Sarubbi F, Nanver LK, Scholtes TLM. CVD delta-doped boron surface layers for ultra-shallow junction formation. In Roozeboom F, Kwong D-L, Iwai H, Öztürk MC, Timans PJ, Gusev E, editors, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. Pennington, N.J.: The Electrochemical Society Inc. 2006. p. 35-44. (ECS Transactions; 2). https://doi.org/10.1149/1.2356262