Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation threshold

Igor A. Makhotkin* (Corresponding Author), Igor Milov, Jaromir Chalupský, Kai Tiedtke, Hartmut Enkisch, Gosse de Vries, Frank Scholze, Frank Siewert, Jacobus M. Sturm, Konstantin V. Nikolaev, Robbert W.E. van de Kruijs, Mark A. Smithers, Henk A.G.M. Van Wolferen, Enrico G. Keim, Eric Louis, Iwanna Jacyna, Marek Jurek, Dorota Klinger, Jerzy B. Pelka, Libor JuhaVěra Hájková, Vojtech Vozda, Tomáš Sburian, Karel Saksl, Bart Faatz, Barbara Keitel, Elke Plönjes, Siegfried Schreiber, Sven Toleikis, Rolf Loch, Martin Hermann, Sebastian Strobel, Rilpho Donker, Tobias Mey, Ryszard Sobierajski

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The process of damage accumulation in thin ruthenium films exposed to multiple femtosecond extreme ultraviolet (XUV) free-electron laser (FEL) pulses below the critical angle of reflectance at the FEL facility in Hamburg(FLASH) was experimentally analyzed. The multi-shot damage threshold is found to be lower than the single-shotdamage threshold. Detailed analysis of the damage morphology and its dependence on irradiation conditionsjustifies the assumption that cavitation induced by the FEL pulse is the prime mechanism responsible formulti-shot damage in optical coatings.

Original languageEnglish
Pages (from-to)2799-2805
Number of pages7
JournalJournal of the Optical Society of America. B: Optical physics
Volume35
Issue number11
DOIs
Publication statusPublished - 1 Nov 2018

Keywords

  • 2019 OA procedure

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