Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Vishal Agarwal (Corresponding Author), Anne-Johan Annema, Raymond J.E. Hueting, Satadal Dutta, Lis K. Nanver, Bram Nauta

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
34 Downloads (Pure)

Abstract

The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.
Original languageEnglish
Article number8472882
Pages (from-to)4883-4890
Number of pages8
JournalIEEE transactions on electron devices
Volume65
Issue number11
DOIs
Publication statusPublished - 1 Nov 2018

Fingerprint

Silicon
Data communication systems
Light emitting diodes
Jitter
Leakage currents
Bit error rate
Pulse position modulation
Photoexcitation
Temperature

Keywords

  • Avalanche light-emitting diodes
  • Data communication
  • Modulation speed
  • Pulse-Position Modulation (PPM)

Cite this

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title = "Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes",
abstract = "The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.",
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Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes. / Agarwal, Vishal (Corresponding Author); Annema, Anne-Johan; Hueting, Raymond J.E.; Dutta, Satadal; Nanver, Lis K.; Nauta, Bram .

In: IEEE transactions on electron devices, Vol. 65, No. 11, 8472882, 01.11.2018, p. 4883-4890.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

AU - Agarwal, Vishal

AU - Annema, Anne-Johan

AU - Hueting, Raymond J.E.

AU - Dutta, Satadal

AU - Nanver, Lis K.

AU - Nauta, Bram

PY - 2018/11/1

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N2 - The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.

AB - The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.

KW - Avalanche light-emitting diodes

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