Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Vishal  Agarwal; Anne-Johan Annema; Raymond J.E. Hueting; Satadal  Dutta; Lis K. Nanver; Bram  Nauta

doi:10.1109/TED.2018.2868126

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Vishal Agarwal (Corresponding Author), Anne-Johan Annema, Raymond J.E. Hueting, Satadal Dutta, Lis K. Nanver, Bram Nauta

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Abstract

The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.

Original language	English
Article number	8472882
Pages (from-to)	4883-4890
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	11
DOIs	https://doi.org/10.1109/TED.2018.2868126
Publication status	Published - 1 Nov 2018

Keywords

Avalanche light-emitting diodes
Data communication
Modulation speed
Pulse-Position Modulation (PPM)

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10.1109/TED.2018.2868126

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@article{5fff983a4ba048e98222e495bf1d0dac,

title = "Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes",

abstract = "The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.",

keywords = "Avalanche light-emitting diodes, Data communication, Modulation speed, Pulse-Position Modulation (PPM)",

author = "Vishal Agarwal and Anne-Johan Annema and Hueting, {Raymond J.E.} and Satadal Dutta and Nanver, {Lis K.} and Bram Nauta",

year = "2018",

month = nov,

day = "1",

doi = "10.1109/TED.2018.2868126",

language = "English",

volume = "65",

pages = "4883--4890",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "11",

}

TY - JOUR

T1 - Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

AU - Agarwal, Vishal

AU - Annema, Anne-Johan

AU - Hueting, Raymond J.E.

AU - Dutta, Satadal

AU - Nanver, Lis K.

AU - Nauta, Bram

PY - 2018/11/1

Y1 - 2018/11/1

N2 - The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.

AB - The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.

KW - Avalanche light-emitting diodes

KW - Data communication

KW - Modulation speed

KW - Pulse-Position Modulation (PPM)

U2 - 10.1109/TED.2018.2868126

DO - 10.1109/TED.2018.2868126

M3 - Article

SN - 0018-9383

VL - 65

SP - 4883

EP - 4890

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 8472882

ER -

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

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