DC modeling of composite MOS transistors

P. de Haan, P.E. de Haan, Eric A.M. Klumperink, M.G. van Leeuwen, Hans Wallinga

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    Abstract

    Mixed-signal circuit design on sea-of-gates arrays requires the use of composite MOSTs, combinations of in-series and in-parallel connected unit MOSTs. To avoid an increase in circuit simulation complexity these are in general replaced by artificial single MOSTs. The analysis in this paper shows that a straightforward replacement will lead to incorrect results. Series MOSTs (in-series connected unit MOSTs) are essentially different from single MOSTs due to the presence of diffusion areas interrupting the channel at regular distances. The influence of lateral diffusion, charge sharing, and series resistance needs to be reconsidered. The theoretical results are confirmed by measurements on an experimental IC. Parameter decks of existing MOST models for circuit level simulation can be modified easily to reflect the length dependences of composite MOST parameters.
    Original languageEnglish
    Title of host publicationESSDERC '95: proceedings of the 25th European Solid State Device Research Conference, 1995
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages801-804
    Publication statusPublished - 25 Sep 1995
    Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
    Duration: 25 Sep 199527 Sep 1995
    Conference number: 25

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference25th European Solid State Device Research Conference, ESSDERC 1995
    Abbreviated titleESSDERC
    CountryNetherlands
    CityThe Hague
    Period25/09/9527/09/95

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    Keywords

    • METIS-112864
    • IR-96426

    Cite this

    de Haan, P., de Haan, P. E., Klumperink, E. A. M., van Leeuwen, M. G., & Wallinga, H. (1995). DC modeling of composite MOS transistors. In ESSDERC '95: proceedings of the 25th European Solid State Device Research Conference, 1995 (pp. 801-804). Piscataway, NJ, USA: IEEE.