DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

V.E. Houtsma, J. Holleman, Cora Salm, F.P. Widdershoven, P.H. Woerlee, A.J. Hof

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the SISC
    Place of PublicationSan Diego, USA
    Number of pages2
    Publication statusPublished - 3 Dec 1998


    • METIS-113849

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