DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

V.E. Houtsma, J. Holleman, Cora Salm, F.P. Widdershoven, P.H. Woerlee, A.J. Hof

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the SISC
    Place of PublicationSan Diego, USA
    Pages41-42
    Number of pages2
    Publication statusPublished - 3 Dec 1998

    Keywords

    • METIS-113849

    Cite this

    Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., Woerlee, P. H., & Hof, A. J. (1998). DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material. In Proceedings of the SISC (pp. 41-42). San Diego, USA.