DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

V.E. Houtsma, J. Holleman, Cora Salm, F.P. Widdershoven, P.H. Woerlee, A.J. Hof

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Keywords

@inproceedings{a722e2cef0084d35888cd8c12b0eba38,

title = "DC-SILC in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material",

keywords = "METIS-113849",

author = "V.E. Houtsma and J. Holleman and Cora Salm and F.P. Widdershoven and P.H. Woerlee and A.J. Hof",

year = "1998",

month = dec,

day = "3",

language = "Undefined",

pages = "41--42",

booktitle = "Proceedings of the SISC",

}