Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations

A.J. Mouthaan, Cora Salm, M.M. Lunenborg, M.M. Lunenborg, Marc de Wolf, M.A.R.C. de Wolf, F.G. Kuper

    Research output: Contribution to journalArticleAcademicpeer-review

    17 Citations (Scopus)

    Abstract

    Circuit aging simulation is seen as a true enhancement to device and circuit simulation. To predict aging of circuit performance, tested models for device parameters are needed in which the change in device behavior as function of time, given the biasing and temperature condition of the device in the circuit, is correctly modeled. The time scale here is the lifetime of the product. A circuit simulator in the transient mode can predict circuit aging using a transformation of the dc/ac biasing situation with an appropriate scaling mechanism. Device aging models that can be implemented in such a circuit simulator are presented here for nMOS and DMOS (double diffused MOS) based on measurements and empirical modeling.
    Original languageUndefined
    Pages (from-to)909-917
    Number of pages9
    JournalMicroelectronics reliability
    Volume2000
    Issue number6
    DOIs
    Publication statusPublished - 2000

    Keywords

    • METIS-111626
    • IR-74341

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