Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma

S.N.R. Kazmi; Cora Salm; Jurriaan Schmitz

doi:10.1016/j.mee.2013.02.034

Deep reactive ion etching of in situ boron doped LPCVD Ge_0.7Si_0.3 using SF₆ and O₂ plasma

S.N.R. Kazmi, Cora Salm, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge0.7Si0.3 alloy in SF6 and O2 plasma. The effect of RF power, SF6 flow, O2 flow and temperature on the etch rate of Ge0.7Si0.3 films with a boron concentration of 2.1 × 1021 atoms/cm3 is investigated. Optimized conditions for a combination of a vertical etch profile and a high selectivity towards PECVD oxide are reported. The effect of boron doping concentration on the etch rate is also investigated. The etch rate is found to decrease with an increase in the dopant concentration. The developed SF6 and O2 based DRIE recipes are applied to fabricate GeSi microresonators.

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	Microelectronic engineering
Volume	110
DOIs	https://doi.org/10.1016/j.mee.2013.02.034
Publication status	Published - Oct 2013
Event	38th International Conference on Micro & Nano Engineering, MNE 2012 - Toulouse, France Duration: 16 Sep 2012 → 20 Sep 2012 Conference number: 38 http://www.mne12.org/en/

Keywords

EWI-23198
IR-86601
METIS-297604
Deep reactive ion etching Ge0.7Si0.3 Etch selectivity Resonator

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Kazmi, S. N. R., Salm, C., & Schmitz, J. (2013). Deep reactive ion etching of in situ boron doped LPCVD Ge_0.7Si_0.3 using SF₆ and O₂ plasma. Microelectronic engineering, 110, 311-314. https://doi.org/10.1016/j.mee.2013.02.034

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title = "Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma",

abstract = "This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge0.7Si0.3 alloy in SF6 and O2 plasma. The effect of RF power, SF6 flow, O2 flow and temperature on the etch rate of Ge0.7Si0.3 films with a boron concentration of 2.1 × 1021 atoms/cm3 is investigated. Optimized conditions for a combination of a vertical etch profile and a high selectivity towards PECVD oxide are reported. The effect of boron doping concentration on the etch rate is also investigated. The etch rate is found to decrease with an increase in the dopant concentration. The developed SF6 and O2 based DRIE recipes are applied to fabricate GeSi microresonators.",

keywords = "EWI-23198, IR-86601, METIS-297604, Deep reactive ion etching Ge0.7Si0.3 Etch selectivity Resonator",

author = "S.N.R. Kazmi and Cora Salm and Jurriaan Schmitz",

year = "2013",

month = "10",

doi = "10.1016/j.mee.2013.02.034",

language = "English",

volume = "110",

pages = "311--314",

journal = "Microelectronic engineering",

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T1 - Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma

AU - Kazmi, S.N.R.

AU - Salm, Cora

AU - Schmitz, Jurriaan

PY - 2013/10

Y1 - 2013/10

N2 - This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge0.7Si0.3 alloy in SF6 and O2 plasma. The effect of RF power, SF6 flow, O2 flow and temperature on the etch rate of Ge0.7Si0.3 films with a boron concentration of 2.1 × 1021 atoms/cm3 is investigated. Optimized conditions for a combination of a vertical etch profile and a high selectivity towards PECVD oxide are reported. The effect of boron doping concentration on the etch rate is also investigated. The etch rate is found to decrease with an increase in the dopant concentration. The developed SF6 and O2 based DRIE recipes are applied to fabricate GeSi microresonators.

AB - This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge0.7Si0.3 alloy in SF6 and O2 plasma. The effect of RF power, SF6 flow, O2 flow and temperature on the etch rate of Ge0.7Si0.3 films with a boron concentration of 2.1 × 1021 atoms/cm3 is investigated. Optimized conditions for a combination of a vertical etch profile and a high selectivity towards PECVD oxide are reported. The effect of boron doping concentration on the etch rate is also investigated. The etch rate is found to decrease with an increase in the dopant concentration. The developed SF6 and O2 based DRIE recipes are applied to fabricate GeSi microresonators.

KW - EWI-23198

KW - IR-86601

KW - METIS-297604

KW - Deep reactive ion etching Ge0.7Si0.3 Etch selectivity Resonator

U2 - 10.1016/j.mee.2013.02.034

DO - 10.1016/j.mee.2013.02.034

M3 - Article

VL - 110

SP - 311

EP - 314

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

ER -