Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma

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    This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge0.7Si0.3 alloy in SF6 and O2 plasma. The effect of RF power, SF6 flow, O2 flow and temperature on the etch rate of Ge0.7Si0.3 films with a boron concentration of 2.1 × 1021 atoms/cm3 is investigated. Optimized conditions for a combination of a vertical etch profile and a high selectivity towards PECVD oxide are reported. The effect of boron doping concentration on the etch rate is also investigated. The etch rate is found to decrease with an increase in the dopant concentration. The developed SF6 and O2 based DRIE recipes are applied to fabricate GeSi microresonators.
    Original languageEnglish
    Pages (from-to)311-314
    Number of pages4
    JournalMicroelectronic engineering
    Publication statusPublished - Oct 2013
    Event38th International Conference on Micro & Nano Engineering, MNE 2012 - Toulouse, France
    Duration: 16 Sep 201220 Sep 2012
    Conference number: 38


    • EWI-23198
    • IR-86601
    • METIS-297604
    • Deep reactive ion etching Ge0.7Si0.3 Etch selectivity Resonator


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