Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

M. Vos; D.O. Boerma; P.J.M. Smulders; S. Oosterhoff

doi:10.1016/0168-583X(86)90062-5

Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

M. Vos, D.O. Boerma, P.J.M. Smulders, S. Oosterhoff

Research output: Contribution to journal › Article › Academic

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Abstract

Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from channeling of MeV α-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.

Original language	Undefined
Pages (from-to)	234-241
Journal	Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms
Volume	17
Issue number	3
DOIs	https://doi.org/10.1016/0168-583X(86)90062-5
Publication status	Published - 1986

Keywords

IR-69601

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10.1016/0168-583X(86)90062-5

Vos86defect

Cite this

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title = "Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis",

abstract = "Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from channeling of MeV α-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.",

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journal = "Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms",

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Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis. / Vos, M.; Boerma, D.O.; Smulders, P.J.M. et al.

In: Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms, Vol. 17, No. 3, 1986, p. 234-241.

Research output: Contribution to journal › Article › Academic

TY - JOUR

T1 - Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

AU - Vos, M.

AU - Boerma, D.O.

AU - Smulders, P.J.M.

AU - Oosterhoff, S.

PY - 1986

Y1 - 1986

N2 - Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from channeling of MeV α-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.

AB - Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from channeling of MeV α-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.

KW - IR-69601

U2 - 10.1016/0168-583X(86)90062-5

DO - 10.1016/0168-583X(86)90062-5

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VL - 17

SP - 234

EP - 241

JO - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

JF - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

SN - 0168-583X

IS - 3

ER -