Defect Engineering in Oxide Heterostructures by Enhanced Oxygen Surface Exchange

Mark Huijben, Gertjan Koster, Michelle Kruize, Sander Wenderich, J. Verbeeck, S. Bals, E. Slooten, B. Shi, Hajo Molegraaf, J.E. Kleibeuker, S. van Aert, J.B. Goedkoop, Alexander Brinkman, David H.A. Blank, M.S. Golden, G. van Tendeloo, Johannes W.M. Hilgenkamp, Augustinus J.H.M. Rijnders

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, it is shown that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3–SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. It is proposed that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.
Original languageUndefined
Pages (from-to)5240-5248
Number of pages9
JournalAdvanced functional materials
Volume23
Issue number42
DOIs
Publication statusPublished - 2013

Keywords

  • IR-89920
  • METIS-296573

Cite this

Huijben, Mark ; Koster, Gertjan ; Kruize, Michelle ; Wenderich, Sander ; Verbeeck, J. ; Bals, S. ; Slooten, E. ; Shi, B. ; Molegraaf, Hajo ; Kleibeuker, J.E. ; van Aert, S. ; Goedkoop, J.B. ; Brinkman, Alexander ; Blank, David H.A. ; Golden, M.S. ; van Tendeloo, G. ; Hilgenkamp, Johannes W.M. ; Rijnders, Augustinus J.H.M. / Defect Engineering in Oxide Heterostructures by Enhanced Oxygen Surface Exchange. In: Advanced functional materials. 2013 ; Vol. 23, No. 42. pp. 5240-5248.
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title = "Defect Engineering in Oxide Heterostructures by Enhanced Oxygen Surface Exchange",
abstract = "The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, it is shown that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3–SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. It is proposed that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.",
keywords = "IR-89920, METIS-296573",
author = "Mark Huijben and Gertjan Koster and Michelle Kruize and Sander Wenderich and J. Verbeeck and S. Bals and E. Slooten and B. Shi and Hajo Molegraaf and J.E. Kleibeuker and {van Aert}, S. and J.B. Goedkoop and Alexander Brinkman and Blank, {David H.A.} and M.S. Golden and {van Tendeloo}, G. and Hilgenkamp, {Johannes W.M.} and Rijnders, {Augustinus J.H.M.}",
year = "2013",
doi = "10.1002/adfm.201203355",
language = "Undefined",
volume = "23",
pages = "5240--5248",
journal = "Advanced functional materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
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Huijben, M, Koster, G, Kruize, M, Wenderich, S, Verbeeck, J, Bals, S, Slooten, E, Shi, B, Molegraaf, H, Kleibeuker, JE, van Aert, S, Goedkoop, JB, Brinkman, A, Blank, DHA, Golden, MS, van Tendeloo, G, Hilgenkamp, JWM & Rijnders, AJHM 2013, 'Defect Engineering in Oxide Heterostructures by Enhanced Oxygen Surface Exchange' Advanced functional materials, vol. 23, no. 42, pp. 5240-5248. https://doi.org/10.1002/adfm.201203355

Defect Engineering in Oxide Heterostructures by Enhanced Oxygen Surface Exchange. / Huijben, Mark; Koster, Gertjan; Kruize, Michelle; Wenderich, Sander; Verbeeck, J.; Bals, S.; Slooten, E.; Shi, B.; Molegraaf, Hajo; Kleibeuker, J.E.; van Aert, S.; Goedkoop, J.B.; Brinkman, Alexander; Blank, David H.A.; Golden, M.S.; van Tendeloo, G.; Hilgenkamp, Johannes W.M.; Rijnders, Augustinus J.H.M.

In: Advanced functional materials, Vol. 23, No. 42, 2013, p. 5240-5248.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Defect Engineering in Oxide Heterostructures by Enhanced Oxygen Surface Exchange

AU - Huijben, Mark

AU - Koster, Gertjan

AU - Kruize, Michelle

AU - Wenderich, Sander

AU - Verbeeck, J.

AU - Bals, S.

AU - Slooten, E.

AU - Shi, B.

AU - Molegraaf, Hajo

AU - Kleibeuker, J.E.

AU - van Aert, S.

AU - Goedkoop, J.B.

AU - Brinkman, Alexander

AU - Blank, David H.A.

AU - Golden, M.S.

AU - van Tendeloo, G.

AU - Hilgenkamp, Johannes W.M.

AU - Rijnders, Augustinus J.H.M.

PY - 2013

Y1 - 2013

N2 - The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, it is shown that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3–SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. It is proposed that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

AB - The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, it is shown that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3–SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. It is proposed that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

KW - IR-89920

KW - METIS-296573

U2 - 10.1002/adfm.201203355

DO - 10.1002/adfm.201203355

M3 - Article

VL - 23

SP - 5240

EP - 5248

JO - Advanced functional materials

JF - Advanced functional materials

SN - 1616-301X

IS - 42

ER -