Defect related photoluminescence of SiGe/Si heterostructures grown by APCVD

J.L. Shi (Corresponding Author), L.K. Nanver, K. Grimm, C.C.G. Visser

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)


Heterostructures of Si1-xGex/Si with Ge content x from 14 to 67%, grown on Si by atmospheric pressure chemical vapor deposition (APCVD) at 650 or 700 °C, have been studied by photoluminescence (PL) spectroscopy, Normarski microscopy after Schimmel etching, atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). For SiGe grown by APCVD with a low Ge content (<40%), strain relaxation is achieved by misfit dislocation formation. For high Ge content (>40%), the relaxation mode is influenced by the deposition temperature, where the energetically most favorable mechanism will dominate. At 700 °C, the SiGe is relaxed by 3D island formation and the PL alloy band can be correlated to island structuring of the surface. At 650 °C, the SiGe is relaxed by misfit dislocations due to the increased density of born-in point defects at low temperatures.

Original languageEnglish
Pages (from-to)254-258
Number of pages5
JournalThin solid films
Issue number1
Publication statusPublished - 27 Mar 2000
Externally publishedYes


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