Defect Structure and Dynamics in Silicon

S.T. Pantelides; R. Car; P. J. Kelly; A. Oshiyama

doi:10.1557/PROC-63-7

Defect Structure and Dynamics in Silicon

S.T. Pantelides^*, R. Car, P. J. Kelly, A. Oshiyama

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.

Original language	English
Title of host publication	Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials
Editors	J. Broughton, W. Krakow, S.T. Pantelides
Publisher	Materials Research Society
Pages	7-11
Number of pages	5
ISBN (Print)	9780931837289
DOIs	https://doi.org/10.1557/PROC-63-7
Publication status	Published - 1 Dec 1986
Externally published	Yes

Publication series

Name	Materials Research Society Symposia Proceedings
Publisher	MRS
Volume	63
ISSN (Print)	0272-9172

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10.1557/PROC-63-7

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Pantelides, S. T., Car, R., Kelly, P. J., & Oshiyama, A. (1986). Defect Structure and Dynamics in Silicon. In J. Broughton, W. Krakow, & S. T. Pantelides (Eds.), Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials (pp. 7-11). (Materials Research Society Symposia Proceedings; Vol. 63). Materials Research Society. https://doi.org/10.1557/PROC-63-7

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abstract = "This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.",

author = "S.T. Pantelides and R. Car and Kelly, {P. J.} and A. Oshiyama",

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Pantelides, ST, Car, R, Kelly, PJ & Oshiyama, A 1986, Defect Structure and Dynamics in Silicon. in J Broughton, W Krakow & ST Pantelides (eds), Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials. Materials Research Society Symposia Proceedings, vol. 63, Materials Research Society, pp. 7-11. https://doi.org/10.1557/PROC-63-7

Defect Structure and Dynamics in Silicon. / Pantelides, S.T.; Car, R.; Kelly, P. J.; Oshiyama, A.

Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials. ed. / J. Broughton; W. Krakow; S.T. Pantelides. Materials Research Society, 1986. p. 7-11 (Materials Research Society Symposia Proceedings; Vol. 63).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.

AB - This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.

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Defect Structure and Dynamics in Silicon

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