@inproceedings{eb33e9ee276f413c82cd4dd0adad1777,
title = "Defect Structure and Dynamics in Silicon",
abstract = "This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.",
author = "S.T. Pantelides and R. Car and Kelly, {P. J.} and A. Oshiyama",
year = "1986",
month = dec,
day = "1",
doi = "10.1557/PROC-63-7",
language = "English",
isbn = "9780931837289",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Society",
pages = "7--11",
editor = "J. Broughton and W. Krakow and S.T. Pantelides",
booktitle = "Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials",
address = "United States",
}