Defect Structure and Dynamics in Silicon

S.T. Pantelides*, R. Car, P. J. Kelly, A. Oshiyama

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.

Original languageEnglish
Title of host publicationSymposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials
EditorsJ. Broughton, W. Krakow, S.T. Pantelides
PublisherMaterials Research Society
Pages7-11
Number of pages5
ISBN (Print)9780931837289
DOIs
Publication statusPublished - 1 Dec 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
PublisherMRS
Volume63
ISSN (Print)0272-9172

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