Degradation of x-Si:H TFTs caused by Electrostatic Discharge

N. Golo-Tosic, F.G. Kuper, A.J. Mouthaan

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    Abstract

    This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified
    Original languageUndefined
    Title of host publicationProceedings of 22nd international conference on microelectronics
    Place of PublicationNis, Serbia
    PublisherIEEE
    Pages359-362
    ISBN (Print)0-7803-5235-1
    DOIs
    Publication statusPublished - 14 May 2000

    Publication series

    Name
    PublisherIEEE
    Volume1

    Keywords

    • IR-17063
    • METIS-113949

    Cite this

    Golo-Tosic, N., Kuper, F. G., & Mouthaan, A. J. (2000). Degradation of x-Si:H TFTs caused by Electrostatic Discharge. In Proceedings of 22nd international conference on microelectronics (pp. 359-362). Nis, Serbia: IEEE. https://doi.org/10.1109/ICMEL.2000.840589