Degradation of x-Si:H TFTs caused by Electrostatic Discharge

N. Golo-Tosic; F.G. Kuper; A.J. Mouthaan

doi:10.1109/ICMEL.2000.840589

Degradation of x-Si:H TFTs caused by Electrostatic Discharge

N. Golo-Tosic, F.G. Kuper, A.J. Mouthaan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified

Original language	Undefined
Title of host publication	Proceedings of 22nd international conference on microelectronics
Place of Publication	Nis, Serbia
Publisher	IEEE
Pages	359-362
ISBN (Print)	0-7803-5235-1
DOIs	https://doi.org/10.1109/ICMEL.2000.840589
Publication status	Published - 14 May 2000
Event	22nd International Conference on Microelectronics, 2000 - Nis, Yugoslavia Duration: 14 May 2000 → 17 May 2000

Publication series

Name
Publisher	IEEE
Volume	1

Conference

Conference	22nd International Conference on Microelectronics, 2000
Period	14/05/00 → 17/05/00
Other	14-17 May 2000

Keywords

IR-17063
METIS-113949

Access to Document

10.1109/ICMEL.2000.840589

00840589

Cite this

@inproceedings{d8b1009c73a54ad8b4f2211856d02e58,

title = "Degradation of x-Si:H TFTs caused by Electrostatic Discharge",

abstract = "This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified",

keywords = "IR-17063, METIS-113949",

author = "N. Golo-Tosic and F.G. Kuper and A.J. Mouthaan",

year = "2000",

month = may,

day = "14",

doi = "10.1109/ICMEL.2000.840589",

language = "Undefined",

isbn = "0-7803-5235-1",

publisher = "IEEE",

pages = "359--362",

booktitle = "Proceedings of 22nd international conference on microelectronics",

address = "United States",

note = "22nd International Conference on Microelectronics, 2000 ; Conference date: 14-05-2000 Through 17-05-2000",

}

TY - GEN

T1 - Degradation of x-Si:H TFTs caused by Electrostatic Discharge

AU - Golo-Tosic, N.

AU - Kuper, F.G.

AU - Mouthaan, A.J.

PY - 2000/5/14

Y1 - 2000/5/14

N2 - This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified

AB - This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified

KW - IR-17063

KW - METIS-113949

U2 - 10.1109/ICMEL.2000.840589

DO - 10.1109/ICMEL.2000.840589

M3 - Conference contribution

SN - 0-7803-5235-1

SP - 359

EP - 362

BT - Proceedings of 22nd international conference on microelectronics

PB - IEEE

CY - Nis, Serbia

T2 - 22nd International Conference on Microelectronics, 2000

Y2 - 14 May 2000 through 17 May 2000

ER -