Density of states and current-voltage characteristics in SIsFS junctions

S. V. Bakurskiy; A. A. Neilo; N. V. Klenov; I. I. Soloviev; A. A. Golubov; M. Y. Kupriyanov

doi:10.1088/1361-6668/ac0870

Density of states and current-voltage characteristics in SIsFS junctions

S. V. Bakurskiy^*, A. A. Neilo, N. V. Klenov, I. I. Soloviev, A. A. Golubov, M. Y. Kupriyanov

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We study the density of states (DOS) inside superconducting Josephson SIsFS junctions with complex interlayer consisting of a thin superconducting spacer 's' between insulator I and a ferromagnetic metal F. The consideration is focused on the local DOS in the vicinity of a tunnel barrier, and it permits to estimate the current-voltage characteristics in the resistive state of such junctions. We study the influence of the proximity effect and Zeeman splitting on the properties of the system, and we find significant sub-gap regions with non-vanishing DOS. We also find manifestations of the 0-π transition in the behavior of DOS in a thin s-layer. These properties lead to the appearance of new characteristic features on I-V curves which provide additional information about electronic states inside the junction.

Original language	English
Article number	085007
Journal	Superconductor science and technology
Volume	34
Issue number	8
DOIs	https://doi.org/10.1088/1361-6668/ac0870
Publication status	Published - 25 Jun 2021

Keywords

Current voltage characteristic
Density of states
Proximity effect
Sub-gap states
Superconductor-ferromagnet hybrids

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10.1088/1361-6668/ac0870

Bakurskiy-2021-Density-of-states-and-currentvoltagFinal published version, 2.44 MBLicence: Taverne

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title = "Density of states and current-voltage characteristics in SIsFS junctions",

abstract = "We study the density of states (DOS) inside superconducting Josephson SIsFS junctions with complex interlayer consisting of a thin superconducting spacer 's' between insulator I and a ferromagnetic metal F. The consideration is focused on the local DOS in the vicinity of a tunnel barrier, and it permits to estimate the current-voltage characteristics in the resistive state of such junctions. We study the influence of the proximity effect and Zeeman splitting on the properties of the system, and we find significant sub-gap regions with non-vanishing DOS. We also find manifestations of the 0-π transition in the behavior of DOS in a thin s-layer. These properties lead to the appearance of new characteristic features on I-V curves which provide additional information about electronic states inside the junction. ",

keywords = "Current voltage characteristic, Density of states, Proximity effect, Sub-gap states, Superconductor-ferromagnet hybrids",

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T1 - Density of states and current-voltage characteristics in SIsFS junctions

AU - Bakurskiy, S. V.

AU - Neilo, A. A.

AU - Klenov, N. V.

AU - Soloviev, I. I.

AU - Golubov, A. A.

AU - Kupriyanov, M. Y.

PY - 2021/6/25

Y1 - 2021/6/25

N2 - We study the density of states (DOS) inside superconducting Josephson SIsFS junctions with complex interlayer consisting of a thin superconducting spacer 's' between insulator I and a ferromagnetic metal F. The consideration is focused on the local DOS in the vicinity of a tunnel barrier, and it permits to estimate the current-voltage characteristics in the resistive state of such junctions. We study the influence of the proximity effect and Zeeman splitting on the properties of the system, and we find significant sub-gap regions with non-vanishing DOS. We also find manifestations of the 0-π transition in the behavior of DOS in a thin s-layer. These properties lead to the appearance of new characteristic features on I-V curves which provide additional information about electronic states inside the junction.

AB - We study the density of states (DOS) inside superconducting Josephson SIsFS junctions with complex interlayer consisting of a thin superconducting spacer 's' between insulator I and a ferromagnetic metal F. The consideration is focused on the local DOS in the vicinity of a tunnel barrier, and it permits to estimate the current-voltage characteristics in the resistive state of such junctions. We study the influence of the proximity effect and Zeeman splitting on the properties of the system, and we find significant sub-gap regions with non-vanishing DOS. We also find manifestations of the 0-π transition in the behavior of DOS in a thin s-layer. These properties lead to the appearance of new characteristic features on I-V curves which provide additional information about electronic states inside the junction.

KW - Current voltage characteristic

KW - Density of states

KW - Proximity effect

KW - Sub-gap states

KW - Superconductor-ferromagnet hybrids

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DO - 10.1088/1361-6668/ac0870

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JO - Superconductor science and technology

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M1 - 085007

ER -

Density of states and current-voltage characteristics in SIsFS junctions

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